“…Since the first report of HTL-free inorganic CsPbI 3 C-PSCs with a low PCE of 4.65% by Liang et al, many efforts have been made to improve the efficiency of this kind of device, including composition manipulation, − element doping, interface engineering, , process optimization, , etc., which significantly boost the PCE of CsPbI 3 C-PSCs to over 16% till now. , Especially, Chen’s group pioneered the high-efficiency CsPbI 3 C-PSCs via composition manipulation, which demonstrated that carefully controlling the precursor ratios of dimethylammonium iodide (DMAI)/PbI 2 /CsI can suppress the formation of δ-CsPbI 3 , minimize DMAPbI 3 residual, and generate PbI 2 passivator, simultaneously, thus boosting the PCE of CsPbI 3 C-PSC to 14.6% . Later, CsCl is introduced into the surface of CsPbI 3 films to induce the formation of an energy level gradient as well as an electron blocking layer, further improving the PCE of this kind of device to 15.23% .…”