Suppressing the spin relaxation of electrons in silicon

Chalaev, Oleg; Song, Yang; Dery, Hanan

doi:10.1103/physrevb.95.035204

Cited by 15 publications

(9 citation statements)

References 132 publications

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“…[21], p. 73). In our calculation, we neglect the dependence of U 2d v1,n1;v2,n2 on the small wavevector measured from its respective valley center (k 0 ) [51] which only renders a higher-order relative error [∼ |k − k 0 |/(2π/a) 1, a being the Si lattice constant], and thus U 2d depends only on the valleys and subbands of the involved states. Our leading-order in wavevector theory establishes the first quantitative analysis for impurity-induced 2D spin relaxation beyond those arising from the DP mechanism.…”

Section: Theoretical Formulationmentioning

confidence: 99%

Impurity-Driven Two-Dimensional Spin Relaxation Induced by Intervalley Spin-Flip Scattering in Silicon

Song

Sarma

2017

Phys. Rev. Applied

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Through the theoretical study of electron spin lifetime in the two-dimensional electron gas (2DEG) confined near the surface of doped Si, we highlight a dominant spin relaxation mechanism induced by the impurity central-cell potential near an interface via intervalley electron scattering. At low temperatures and with modest doping, this Yafet spin flip mechanism can become more important than the D'yakonov-Perel' spin relaxation arising from the structural Rashba or Dresselhaus spinorbit coupling field. As the leading-order impurity-induced spin flip happens only between two non-opposite valleys in Si, 2DEG systems in Si MOSFETs or SiGe heterostructures are a natural platform to test and utilize this spin relaxation mechanism due to the valley splitting near the interface and the tunability by electrical gating or applied stress. Our proposed new spin relaxation mechanism may explain a part of the spin relaxation contribution to Si-based 2DEG systems, and should have spintronic applications in Si-based devices.

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Section: Theoretical Formulationmentioning

confidence: 99%

Impurity-Driven Two-Dimensional Spin Relaxation Induced by Intervalley Spin-Flip Scattering in Silicon

Song

Sarma

2017

Phys. Rev. Applied

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“…When the strain is induced in the Si 1−x Ge x alloys, the strain effect on the spin-related physics can be dominant. [52] Therefore, at around x ∼ 0.85, it may be difficult to observe the great change in the spin-related physics depending on x.…”

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confidence: 99%

Pure spin current transport in a SiGe alloy

Naitô

Yamada

Tsukahara

et al. 2018

Appl. Phys. Express

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Using four-terminal nonlocal magnetoresistance measurements in lateral spin-valve devices with Si0.1Ge0.9, we study pure spin current transport in a degenerate SiGe alloy (n ∼ 5.0 × 10 18 cm −3 ). Clear nonlocal spin-valve signals and Hanle-effect curves, indicating generation, transport, and detection of pure spin currents, are observed. The spin diffusion length and spin lifetime of the Si0.1Ge0.9 layer at low temperatures are reliably estimated to be ∼0.5 µm and ∼0.2 ns, respectively. This study demonstrates the possibility of exploring physics and developing spintronic applications using SiGe alloys.

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“…Since the contribution of the phonon-induced intervalley spin-flip scattering was dominant as the spin relaxation in n + -Si, we should utilize a strained-Si, which can lift the valley degeneracy of the conduction band [53][54] , as a spintransport channel to suppress the phonon-induced intervalley spin-flip scattering at room temperature.…”

Section: Future Prospects For Si Spin-mosfetsmentioning

confidence: 99%

Study of Spin Transport and Magnetoresistance Effect in Silicon-based Lateral Spin Devices for Spin-MOSFET Applications

2020

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In this paper, we introduce the current status of research and development on silicon-based spin metal-oxidesemiconductor field-effect transistors (Si spin-MOSFETs) in terms of electrical spin injection, spin transport, and spin detection in Si-based lateral spin-valve devices. First, it is important for understanding the spin transport in Si to obtain reliably large spin signals for analyses. By using n +-Si spin-transport layers with a small cross-sectional area of ~0.3 μm 2 , we can observe 50-fold the magnitude of four-terminal nonlocal (NL) magnetoresistance signals and NL Hanle signals at room temperature in previous works. Next, by analyzing these spin signals, we can reliably estimate the spin diffusion length and spin relaxation time of n +-Si at room temperature. Also, we clarify that inter-valley spinflip scattering is one of the dominant spin relaxation mechanisms in n +-Si at room temperature. Furthermore, we find the crystal orientation effect on spin injection/detection efficiency in n +-Si and discuss the possible origins. Finally, we demonstrate a room-temperature MR ratio of 0.06%, twice as large as that in the previous work.

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Suppressing the spin relaxation of electrons in silicon

Cited by 15 publications

References 132 publications

Impurity-Driven Two-Dimensional Spin Relaxation Induced by Intervalley Spin-Flip Scattering in Silicon

Impurity-Driven Two-Dimensional Spin Relaxation Induced by Intervalley Spin-Flip Scattering in Silicon

Pure spin current transport in a SiGe alloy

Study of Spin Transport and Magnetoresistance Effect in Silicon-based Lateral Spin Devices for Spin-MOSFET Applications

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