Suppression of boron diffusion in deep submicron devices

Gribelyuk, M.; Oldiges, Phil; Ronsheim, P.; Yuan, Jun; Kimball, Leon

doi:10.1116/1.3656376

Cited by 6 publications

(1 citation statement)

References 12 publications

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“…The most promising approach to realize precisely designed carrier distribution in devices is co-implantation with a different species. [4][5][6][7] However, mutual interactions that occur between the dopants and the co-implanted ions during annealing processes have not been sufficiently investigated. It is therefore necessary to form a deeper understanding of dopant behavior at the atomic level.…”

Section: Introductionmentioning

confidence: 99%

Impact of carbon co-implantation on boron distribution and activation in silicon studied by atom probe tomography and spreading resistance measurements

Shimizu

Inoue

Yano

et al. 2016

Jpn. J. Appl. Phys.

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The impact of carbon (C) co-implantation on boron (B) activation in crystalline silicon was investigated. The detailed distribution of B and C atoms and B activation ratios dependent on the C ion-implantation energies were examined based on three-dimensional spatial mappings of B and C obtained by atom probe tomography and from depth profiles of their concentrations from secondary ion mass spectrometry and depth profiles of carrier concentrations with spreading resistance measurements. At all C implantation energies (8, 15, and 30 keV), B out-diffusion during activation annealing was reduced, so that more B atoms were observed in the C co-implanted samples. The carrier concentration was decreased throughout the entire implanted region for C implantation energies of 15 and 30 keV, although it was only increased at greater depths for C co-implantation at 8 keV. Two different effects of C co-implantation, (I) reduction of B out-diffusion and (II) influence of B activation, were confirmed.

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Section: Introductionmentioning

confidence: 99%