Suppression of boron penetration in BF/sub 2/-implanted p-type gate MOSFET by trapping of fluorines in amorphous gate

Lin, Chih‐Yung; Chang, Chun‐Yen; Hsu, Ching-Fang

doi:10.1109/16.398666

Cited by 20 publications

(1 citation statement)

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“…Although we did the work on a 0.8 µm CMOS technology, other technologies use stacked amorphous-Si on poly-Si layers too 5 , so that our analysis and conclusions can be applied to these cases also.…”

Section: Discussionmentioning

confidence: 99%

<title>Identification of amorphous silicon residues in a low-power CMOS technology</title>

et al. 1999

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A large variety of physical analysis techniques are used in the semiconductor industry to identify defects impacting yield or reliability. Identification of a defect often requires the combined use of several techniques to give a clear understanding of the defect nature.In the present study, several microscopy techniques (SEM, TEM, Analytical-TEM, AFM and FIB) have been intensively used to identify the origin of residues observed on the edge of large active areas in a low power CMOS technology. A KLA automatic inspection system has been used for locating and quantifying the defects. It has been shown that the defects are related to amorphous silicon residues whose origin is related to the gate deposition process. In the process, the polysilicon gate is deposited in two steps. A first thin amorphous silicon layer is deposited, through which the Vt implant is done, followed by the deposition of a thick polysilicon layer.Analysis of defaults showed that the residues are related to a non-uniform thin oxide layer located between the thick polysilicon layer and the underlying thin amorphous silicon, which halts the polysilicon gate etch. Thicker native oxide on amorphous silicon due to humidity or drying spots is the presumed source of the thin non-uniform oxide. Increasing the HF dip before the polysilicon deposition eliminated almost all residues. No negative effect on the oxide quality or other electrical parameter has been observed. Eliminating altogether the amorphous-Si gate deposition process is an even more robust solution.

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Section: Discussionmentioning

confidence: 99%

<title>Identification of amorphous silicon residues in a low-power CMOS technology</title>

et al. 1999

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Reduction of boron penetration through thin silicon oxide with a nitrogen doped silicon layer

Jalabert

Temple‐Boyer

Sarrabayrouse

et al. 2001

Microelectronics Reliability

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Electronic Structure of the BF₂ Radical Determined by ab Initio Calculations and Resonance-Enhanced Multiphoton Ionization Spectroscopy

1997

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We report the first electronic absorption spectrum of the boron difluoride radical. This spectrum appeared in mass-selected multiphoton ionization spectra between 235 and 420 nm. Strong bent−linear structure changes prevented observations of electronic origin bands. EOM-CCSD ab initio calculations suggest that the observed vibrational bands arise from Ã2B1 ← X̃ 2A1 (T vert = 35 100 cm-1) one-photon absorption and from B̃ 2A1 (3s) ←← X̃ 2A1 (T vert = 59 100 cm-1) and C̃ (3p) ←← X̃ 2A1 (T vert = 63 100 cm-1) two-photon transitions. Ab initio calculations predicted the geometries and vibrational frequencies of the ground states of the BF2 radical, cation, and anion. Ab initio calculations also predicted the vertical transition energies to the excited electronic states from the ground state radical. QCISD(T) calculations estimate ionization potentials for BF2 radicals of IPa = 8.66 eV and IPv = 10.44 eV and adiabatic and vertical electron detachment energies for BF2 - of EA = 1.14 eV and VDE = 1.64 eV. We estimate these ionization and detachment energies to be reliable to about 0.05 and 0.10 eV, respectively.

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Suppression of boron penetration in BF/sub 2/-implanted p-type gate MOSFET by trapping of fluorines in amorphous gate

Cited by 20 publications

References 24 publications

<title>Identification of amorphous silicon residues in a low-power CMOS technology</title>

<title>Identification of amorphous silicon residues in a low-power CMOS technology</title>

Reduction of boron penetration through thin silicon oxide with a nitrogen doped silicon layer

Electronic Structure of the BF₂ Radical Determined by ab Initio Calculations and Resonance-Enhanced Multiphoton Ionization Spectroscopy

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Suppression of boron penetration in BF/sub 2/-implanted p-type gate MOSFET by trapping of fluorines in amorphous gate

Cited by 20 publications

References 24 publications

<title>Identification of amorphous silicon residues in a low-power CMOS technology</title>

<title>Identification of amorphous silicon residues in a low-power CMOS technology</title>

Reduction of boron penetration through thin silicon oxide with a nitrogen doped silicon layer

Electronic Structure of the BF2 Radical Determined by ab Initio Calculations and Resonance-Enhanced Multiphoton Ionization Spectroscopy

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Electronic Structure of the BF₂ Radical Determined by ab Initio Calculations and Resonance-Enhanced Multiphoton Ionization Spectroscopy