Suppression of boron transient enhanced diffusion in silicon and silicon germanium by fluorine implantation

Positron annihilation spectroscopy is particularly suitable for studying vacancy-type defects in semiconductors. Combining state-of-the-art experimental and theoretical methods allows for detailed identification of the defects and their chemical surroundings. Also charge states and defect levels in the band gap are accessible. In this review the main experimental and theoretical analysis techniques are described. The usage of these methods is illustrated through examples in technologically important elemental and compound semiconductors. Future challenges include the analysis of noncrystalline materials and of transient defect-related phenomena.

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Suppression of boron transient enhanced diffusion in silicon and silicon germanium by fluorine implantation

Cited by 3 publications

References 28 publications

Comparative study on EOR and deep level defects in preamorphised Si implanted with B+, and F+–B+

Comparative study on EOR and deep level defects in preamorphised Si implanted with B+, and F+–B+

A comprehensive model for the diffusion of boron in silicon in presence of fluorine

Defect identification in semiconductors with positron annihilation: Experiment and theory

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