2000
DOI: 10.1109/16.824720
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Suppression of gate leakage current in n-AlGaAs/GaAs power HEMTs

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Cited by 20 publications
(15 citation statements)
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“…It is found that the drastic decrease of the current is revealed in our experiments while etching time is over 600 sec. This may be attributed to the sensitivity of damage and roughness from the over-etching recessed surface (Nagayama et al 2000). The optimum I DSS located in the flat portion of the curve is produced in the beginning of removing cap layer.…”
Section: Results and Discussion Of Gate-recessed E-phemtsmentioning
confidence: 99%
“…It is found that the drastic decrease of the current is revealed in our experiments while etching time is over 600 sec. This may be attributed to the sensitivity of damage and roughness from the over-etching recessed surface (Nagayama et al 2000). The optimum I DSS located in the flat portion of the curve is produced in the beginning of removing cap layer.…”
Section: Results and Discussion Of Gate-recessed E-phemtsmentioning
confidence: 99%
“…These results imply that a degree of overetching can be tolerated with a uniform surface during the gate recess process, when this selective etchant is used. Figure 6 shows the device gate-drain leakage current characteristics, which are very sensitive to the defects and damage from the etched surfaces, 22 23 Obviously, etching system 1 yields the smallest gate leakage current and largest turn-on and breakdown voltage. These improved I-V characteristics strongly suggest that the CA/H 2 O 2 /H 2 O etching system has great potential for forming better etched surface states with high uniformity, during the gate recess process.…”
Section: Resultsmentioning
confidence: 99%
“…However, because Ⅲ-V semiconductor surfaces are highly reactive and native oxides are readily formed on them when exposed to oxygen, nonstoichiometric surface of gate recess containing native oxides could be formed during the process of wet or dry surface cleaning [5]. Defects on the nonstoichiometric surface of gate recess would not only engender "kink effect" [6,7], but also increase gate leakage current and introduce shot noise source from gate to drain [8,9]. Therefore, treatments for the surface of gate recess are very important subjects for InAlAs/InGaAs InP based HEMTs.…”
Section: Introductionmentioning
confidence: 99%