Suppression of indium-composition fluctuations in InGaN epitaxial layers by periodically-pulsed mixture of N
                    <sub>2</sub>
                    and H
                    <sub>2</sub>
                    carrier gas

Wang, Hailong; Zhang, Xiaohan; Wang, Hongxia; Bin, Li; Chen, Chong; Li, Yongxian; Yan, Hongwei; Wu, Zhaohui; Jiang, Hao

doi:10.1088/1674-1056/27/12/127805

Cited by 8 publications

(3 citation statements)

References 38 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Both in vivo and in vitro experiments have demonstrated that CircFAM160A2 regulates chondrocyte mitochondrial stability and chondrocyte apoptosis through the miR-505-3p/SIRT3 axis (Bao et al, 2021). Recent studies have also that CircHIPK3, through the mir-30a-3p/PON2 axis, regulates mitochondrial function, which in turn affects chondrocyte apoptosis (Shang et al, 2022). These findings suggest that our circRNA may also regulate mitochondria in OA, providing new research ideas.…”

Section: Circrna Is Involved In the Oxidation Stress Processmentioning

confidence: 77%

CircRNAs in osteoarthritis: research status and prospect

2023

Front. Genet.

View full text Add to dashboard Cite

Osteoarthritis (OA) is the most common joint disease globally, and its progression is irreversible. The mechanism of osteoarthritis is not fully understood. Research on the molecular biological mechanism of OA is deepening, among which epigenetics, especially noncoding RNA, is an emerging hotspot. CircRNA is a unique circular noncoding RNA not degraded by RNase R, so it is a possible clinical target and biomarker. Many studies have found that circRNAs play an essential role in the progression of OA, including extracellular matrix metabolism, autophagy, apoptosis, the proliferation of chondrocytes, inflammation, oxidative stress, cartilage development, and chondrogenic differentiation. Differential expression of circRNAs was also observed in the synovium and subchondral bone in the OA joint. In terms of mechanism, existing studies have mainly found that circRNA adsorbs miRNA through the ceRNA mechanism, and a few studies have found that circRNA can serve as a scaffold for protein reactions. In terms of clinical transformation, circRNAs are considered promising biomarkers, but no large cohort has tested their diagnostic value. Meanwhile, some studies have used circRNAs loaded in extracellular vesicles for OA precision medicine. However, there are still many problems to be solved in the research, such as the role of circRNA in different OA stages or OA subtypes, the construction of animal models of circRNA knockout, and more research on the mechanism of circRNA. In general, circRNAs have a regulatory role in OA and have particular clinical potential, but further studies are needed in the future.

show abstract

Section: Circrna Is Involved In the Oxidation Stress Processmentioning

confidence: 77%

CircRNAs in osteoarthritis: research status and prospect

2023

Front. Genet.

View full text Add to dashboard Cite

show abstract

“…The improvement in overall transmittance of the grown structure in the visible region that extended into the infrared region is observed when the InGaN layer was grown at 840°C. However, additional measurement and proof would be needed to explain this behavior, as the optical transmittance is also affected by surface scattering and impurity absorption (Wang et al , 2018a).…”

Section: Resultsmentioning

confidence: 99%

The role of growth temperature on the indium incorporation process for the MOCVD growth of InGaN/GaN heterostructures

Yusof

Hassan

Hamady

et al. 2021

View full text Add to dashboard Cite

Purpose The purpose of this paper is to investigate the effect of growth temperature on the evolution of indium incorporation and the growth process of InGaN/GaN heterostructures. Design/methodology/approach To examine this effect, the InGaN/GaN heterostructures were grown using Taiyo Nippon Sanso Corporation metal-organic chemical vapor deposition (MOCVD) SR4000-HT system. The InGaN/GaN heterostructures were epitaxially grown on 3.4 µm undoped-GaN (ud-GaN) and GaN nucleation layer, respectively, over a commercial 2” c-plane flat sapphire substrate. The InGaN layers were grown at different temperature settings ranging from 860°C to 820°C in a step of 20°C. The details of structural, surface morphology and optical properties were investigated using X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM), atomic force microscopy and ultraviolet-visible (UV-Vis) spectrophotometer, respectively. Findings InGaN/GaN heterostructure with indium composition up to 10.9% has been successfully grown using the MOCVD technique without any phase separation detected within the sensitivity of the instrument. Indium compositions were estimated through simulation fitting of the XRD curve and calculation of Vegard’s law from UV-Vis measurement. The thickness of the structures was determined using the Swanepoel method and the FE-SEM cross-section image. Originality/value This paper report on the effect of MOCVD growth temperature on the growth process of InGaN/GaN heterostructure, which is of interest in solid-state lighting technology, especially in light-emitting diodes and solar cell application.

show abstract

“…Therefore, the gallium and indium adatoms are more easily to achieve thermodynamic steady state, and the interfaces become flat and steep. Moreover, in the mixed gas environment of H 2 and NH 3 , indium-rich clusters will desorb more easily than the indium-poor regions [ 31 ]. Thus, the distribution of indium content will be more uniformly across the whole well layers, resulting in a better MQWs’ homogeneity of sample B.…”

Section: Resultsmentioning

confidence: 99%

The Atomic Rearrangement of GaN-Based Multiple Quantum Wells in H2/NH3 Mixed Gas for Improving Structural and Optical Properties

et al. 2021

View full text Add to dashboard Cite

In this work, three GaN-based multiple quantum well (MQW) samples are grown to investigate the growth techniques of high-quality MQWs at low temperature (750 °C). Instead of conventional temperature ramp-up process, H2/NH3 gas mixture was introduced during the interruption after the growth of InGaN well layers. The influence of hydrogen flux was investigated. The cross-sectional images of MQW via transmission electron microscope show that a significant atomic rearrangement process happens during the hydrogen treatment. Both sharp interfaces of MQW and homogeneous indium distribution are achieved when a proper proportion of hydrogen was used. Moreover, the luminescence efficiency is improved strongly due to suppressed non-radiative recombination process and a better homogeneity of MQWs. Such kind of atomic rearrangement process is mainly caused by the larger diffusion rate of gallium and indium adatoms in H2/NH3 mixed gas, which leads to a lower potential barrier energy to achieve thermodynamic steady state. However, when excessive hydrogen flux is introduced, the MQW will be partly damaged, and the luminescence performance will deteriorate.

show abstract

Suppression of indium-composition fluctuations in InGaN epitaxial layers by periodically-pulsed mixture of N ₂ and H ₂ carrier gas

Cited by 8 publications

References 38 publications

CircRNAs in osteoarthritis: research status and prospect

CircRNAs in osteoarthritis: research status and prospect

The role of growth temperature on the indium incorporation process for the MOCVD growth of InGaN/GaN heterostructures

The Atomic Rearrangement of GaN-Based Multiple Quantum Wells in H2/NH3 Mixed Gas for Improving Structural and Optical Properties

Contact Info

Product

Resources

About

Suppression of indium-composition fluctuations in InGaN epitaxial layers by periodically-pulsed mixture of N 2 and H 2 carrier gas

Cited by 8 publications

References 38 publications

CircRNAs in osteoarthritis: research status and prospect

CircRNAs in osteoarthritis: research status and prospect

The role of growth temperature on the indium incorporation process for the MOCVD growth of InGaN/GaN heterostructures

The Atomic Rearrangement of GaN-Based Multiple Quantum Wells in H2/NH3 Mixed Gas for Improving Structural and Optical Properties

Contact Info

Product

Resources

About

Suppression of indium-composition fluctuations in InGaN epitaxial layers by periodically-pulsed mixture of N ₂ and H ₂ carrier gas