Suppression of indium vaporization from GaN/GaInN superlattice by BP capping layer

Odawara, M.; Yamatake, K.; Yamashita, Takako; Udagawa, T.

doi:10.1016/j.jcrysgro.2003.11.044

Cited by 3 publications

(2 citation statements)

References 4 publications

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“…One of the most common ways to make BP is through bulk synthesis techniques, such as flux growth or solid-state reaction. 30,[76][77][78][79] Thin-film deposition of BP is almost invariably carried out by CVD of some kind, either metal-organic chemical vapor deposition (MOCVD), 73,80,81 or standard CVD, 68,[70][71][72]74,75,[82][83][84][85] or even plasma-enhanced CVD. 86 Other, less common deposition methods include vapor-liquid-solid growth, 87,88 thermal evaporation from powders in vacuum, 89 or sputtering in phosphine/Ar atmosphere.…”

Section: Boron Phosphidementioning

confidence: 99%

Bridging the p-type transparent conductive materials gap: synthesis approaches for disperse valence band materials

Fioretti

Morales‐Masis

2020

J. Photon. Energy

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Transparent conductive materials (TCMs) with high p-type conductivity and broadband transparency have remained elusive for years. Despite decades of research, no p-type material has yet been found to match the performance of n-type TCMs. If developed, the high-performance p-type TCMs would lead to significant advances in a wide range of technologies, including thin-film transistors, transparent electronics, flat screen displays, and photovoltaics. Recent insights from high-throughput computational screening have defined design principles for identifying candidate materials with low hole effective mass, also known as disperse valence band materials. Particularly, materials with mixed-anion chemistry and nonoxide materials have received attention as being promising next-generation p-type TCMs. However, experimental demonstrations of these compounds are scarce compared to the computational output. One reason for this gap is the experimental difficulty of safely and controllably sourcing elements, such as sulfur, phosphorous, and iodine for depositing these materials in thin-film form. Another important obstacle to experimental realization is air stability or stability with respect to formation of the competing oxide phases. We summarize experimental demonstrations of disperse valence band materials, including synthesis strategies and common experimental challenges. We end by outlining recommendations for synthesizing p-type TCMs still absent from the literature and highlight remaining experimental barriers to be overcome.

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Section: Boron Phosphidementioning

confidence: 99%

Bridging the p-type transparent conductive materials gap: synthesis approaches for disperse valence band materials

Fioretti

Morales‐Masis

2020

J. Photon. Energy

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“…In addition, there are related heterostructure studies of GaN and BP semiconductors. When these studies are examined, it is seen that they are suppression of the indium vaporization of the GaN/ GaInN super-cell with the BP cover layer [26], the role of BP in the growth of GaN on Si [27], obtaining GaN on Si substrates using Si thin films [28], (0001) morphological study of GaN on Si (100) substrates using buffer layer selective epitaxial growth [29] and (0001) of the dual position growth of (111) BP [30]. The doping of Te atom to the system affects the field emission properties of nanowires.…”

Section: Introductionmentioning

confidence: 99%

Density Functional Calculation for BP/GaN Heterostructures

Özkişi

Dalgic

2018

MSF

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Recently, it has become indispensable to use semiconducting nanostructures in the production and development of electronic devices. In this study, the bulk and nanowire heterostructures of the BP / GaN system have been investigated for the structures pure and Te atom doped. In calculations, the plane wave self-consistent field program based on density functional theory was used. The average potentials of the aforementioned systems have been calculated and the interface effect has investigated.

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Effect of gas flow ratio on the microstructure and mechanical properties of boron phosphide films prepared by reactive magnetron sputtering

Zhang

Zhu

Jiang

et al. 2011

Applied Surface Science

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Suppression of indium vaporization from GaN/GaInN superlattice by BP capping layer

Cited by 3 publications

References 4 publications

Bridging the p-type transparent conductive materials gap: synthesis approaches for disperse valence band materials

Bridging the p-type transparent conductive materials gap: synthesis approaches for disperse valence band materials

Density Functional Calculation for BP/GaN Heterostructures

Effect of gas flow ratio on the microstructure and mechanical properties of boron phosphide films prepared by reactive magnetron sputtering

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