Suppression of interface recombination by buffer layer for back contacted silicon heterojunction solar cells

Mikolášek, Miroslav; Pribytny, Patrik; Donoval, D.; Marek, Juraj; Chvála, Aleš; Molnar, Marian; Kováč, J.

doi:10.1016/j.apsusc.2014.05.110

Cited by 16 publications

(7 citation statements)

References 10 publications

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“…Additionally, the HHJ cell fill factor is also improved and less influenced by interface defects [23]. Such improvements were also observed by simulations by other authors on similar homo-heterojunction cells with insertion of a highly doped crystalline layer at the emitter of either n-type or p-type silicon solar cells [24,25].…”

Section: Introductionsupporting

confidence: 64%

Homo-heterojunction concept: From simulations to high efficiency solar cell demonstration

Carrere

Lachaume

Thai

et al. 2018

Solar Energy Materials and Solar Cells

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A B S T R A C TThe novel solar cell architecture called silicon homo-heterojunction (HHJ) cell is investigated combining experimental and simulation approaches. This structure intends to overcome the limitations of the silicon heterojunction technology regarding the amorphous/ crystalline silicon interface (p) a-Si:H/(i) a-Si:H /(n) c-Si) by the addition of a (p + ) c-Si layer at the hetero-interface. First, the added (p + ) c-Si layer is experimentally investigated using boron implantation through the realization and characterization of symmetric solar cell precursors. An adapted process flow taking into account the (p + ) c-Si profile optimization, the annealing effects on substrate degradation, and the impact on surface passivation, is deeply explored. Then, large area solar cells are processed and the solar cell performance are discussed in view of the data obtained on precursors and with the help of realistic numerical simulations. Overall, we observe that the HHJ solar cells exhibit a small performance improvement compared to reference heterojunction cells. In particular, a gain in the fill factor is observed, which is shown to be originated from both an improvement in field effect and a decrease of the vertical series resistance from the a-Si:H layers. The experimental data obtained on the processed homo-heterojunction solar cells confirm that this technology can lead to improved conversion efficiencies compared to the high quality reference heterojunction solar cells.

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Section: Introductionsupporting

confidence: 64%

Homo-heterojunction concept: From simulations to high efficiency solar cell demonstration

Carrere

Lachaume

Thai

et al. 2018

Solar Energy Materials and Solar Cells

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“…The latter route, commonly called field effect passivation, could be realized through the addition of a thin and highly doped (p þ )c-Si layer underneath the (i)a-Si:H passivation layer. 10 Because of the added (p þ )c-Si/(n)c-Si homojunction, the alternative cell architecture can be referred to as a front side hetero-homojunction (HHJ FS ). The HHJ FS architecture is introduced in Figure 1.…”

Section: Introductionmentioning

confidence: 99%

“…So far, only a few studies have investigated the hetero-homojunction concept. [10][11][12] Zhong et al simulated the previously defined HHJ FS cell but removed the (i)a-Si:H passivation layer. 11 The cell displays V OC and fill factor (FF) improvement and a reduced interface defect (D it ) sensitivity (i.e., less performance reduction for increasing D it ).…”

Section: Introductionmentioning

confidence: 99%

Insertion of a thin highly doped crystalline layer in silicon heterojunction solar cells: Simulation and perspectives towards a highly efficient cell concept

Carrere

Varache

Muñoz

et al. 2015

Journal of Renewable and Sustainable Energy

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“…The simulation study is done with intention to show possible compensation of the negative effect of defect states at the heterointerface and to attain a low sensitivity of V OC on the interface quality with additional 3-D effects (Fig. 7) [9]. V OC and η plotted as functions of the N + buffer layer doping concentration (N buff ).…”

Section: Full 3-d Modelingmentioning

confidence: 99%

“…To fully utilize the potential of SHJ and BC-SJH solar cells, the study and optimization of emitter amorphous silicon/crystalline silicon heterointerface was identified as the most important issue [10,11,12,13]. Results are compared with a solar cell in published results [9]. …”

Section: Full 3-d Modelingmentioning

confidence: 99%

TCAD simulation methodology for 3-D advanced electro-physical and optical analysis

Pribytny

Molnar

Chvála

et al. 2015

2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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This is first demonstrated using a full 3-D approach, where a global model includes a part of a solar cell with a textured surface. Due to device complexity, many of them cannot be simulated in the full 3-D setup within a reasonable amount of time. Therefore, derived solutions are proposed, which are based on the combined-mode setup coupling the 3-D TCAD model of the solar cell to a "standard" TCAD (2-D or 3-D) model of the active device. We propose a smart coupling between the device and the package that combines the speed and accuracy of mixed-mode simulation assuming additional 3-D effects.

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Suppression of interface recombination by buffer layer for back contacted silicon heterojunction solar cells

Cited by 16 publications

References 10 publications

Homo-heterojunction concept: From simulations to high efficiency solar cell demonstration

Homo-heterojunction concept: From simulations to high efficiency solar cell demonstration

Insertion of a thin highly doped crystalline layer in silicon heterojunction solar cells: Simulation and perspectives towards a highly efficient cell concept

TCAD simulation methodology for 3-D advanced electro-physical and optical analysis

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