2015
DOI: 10.1063/1.4908189
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Insertion of a thin highly doped crystalline layer in silicon heterojunction solar cells: Simulation and perspectives towards a highly efficient cell concept

Abstract: International audienc

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Cited by 11 publications
(5 citation statements)
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“…HHJ and SHJ cells have similar J SC values (variability is linked to screen printing process). This is consistent with numerical simulations where no short circuit current loss is expected in rear emitter HHJ cells compared to the reference SHJ cells [23].…”
Section: Solar Cells Resultssupporting
confidence: 91%
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“…HHJ and SHJ cells have similar J SC values (variability is linked to screen printing process). This is consistent with numerical simulations where no short circuit current loss is expected in rear emitter HHJ cells compared to the reference SHJ cells [23].…”
Section: Solar Cells Resultssupporting
confidence: 91%
“…These features have been evidenced to originate from the additional field effect passivation brought by the (p + ) c-Si region. Additionally, the HHJ cell fill factor is also improved and less influenced by interface defects [23]. Such improvements were also observed by simulations by other authors on similar homo-heterojunction cells with insertion of a highly doped crystalline layer at the emitter of either n-type or p-type silicon solar cells [24,25].…”
Section: Introductionsupporting
confidence: 76%
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“…The solar cell architectures defined consist of transparent conductive oxide/ buffer/absorber/hole transport material. The basic physics and device parameters for the simulated cells are obtained from literature [6][7][8]. The parameters for cells heterojunction layers are summarized in Table 1.…”
Section: Introductionmentioning
confidence: 99%