Suppression of Ostwald ripening in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">In</mml:mi></mml:mrow><mml:mrow><mml:mn>0.5</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>0.5</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mi mathvariant="normal">As</mml:mi></mml:math>quantum dots on a vicinal (100) substrate

Min, Byungdon; Kim, Yong; Kim, Eun Kyu; Min, Seung-Kee; Park, Mann Jang

doi:10.1103/physrevb.57.11879

Cited by 63 publications

(31 citation statements)

References 17 publications

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“…The growth interruption (GI) is one of the key growth parameters for the fabrication of high-quality, selfassembled quantum dots (QDs) by molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition (MOCVD) [1,2]. The evolution of QD morphology through the GI is of great technological interest.…”

Section: Introductionmentioning

confidence: 99%

Structural evolution of ZnSe/ZnS quantum dots during growth interruptions under hydrogen flows

Kim

Baek

Chang

2006

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

Structural evolution of ZnSe/ZnS quantum dots during growth interruptions under hydrogen flows

Kim

Baek

Chang

2006

Journal of Crystal Growth

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“…Other reports show the coexistence of different types of islands [9] and a shape transition from small pyramid-shaped islands to dome-shaped islands [10]. In InGaAs͞GaAs QD formation, ripening has also been observed upon annealing, which can be partially suppressed by steps in miscut substrates [11]. Ripening in QDs would have obvious disadvantages for applications of island-based devices; therefore, determining if stable islands can be achieved is of both practical and fundamental interest.…”

mentioning

confidence: 99%

Stable and Metastable InGaAs/GaAs Island Shapes and Surfactantlike Suppression of the Wetting Transformation

et al. 1998

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Contrasting behaviors are observed in InGaAs͞GaAs island formation during vapor phase epitaxy: variation of group V partial pressures gives different critical thicknesses for the onset of the StranskiKrastanow transformation, surface coverages, ratios between coherent and incoherent islands, and dissimilar morphologies upon annealing. The latter experiments show that small lens-shaped islands can be found in equilibrium if InGaAs surface energies are minimized, leading to the conclusion that AsH 3 can raise surface energies and act as an impurity-free "morphactant." [S0031-9007(98) The importance of Stranski-Krastanow (S-K) coherent island formation as a mechanism for strain relaxation has been established in both Ge͞Si [1] and InAs͞GaAs [2,3] heteroepitaxy. In the S-K or wetting transformation, growth is initially two dimensional, until the film reaches a strain dependent critical thickness. Deposition beyond this critical thickness results in island formation and subsequent increases in island densities until saturation. Interest in S-K growth has been rekindled by the first reports of these strained islands to make defect-free, self-assembled, InGaAs͞GaAs semiconductor quantum dots (QDs) [4][5][6]. Since then, a large number of studies have focused on strain relaxation by island formation. An improved understanding of the varying and often competing mechanisms that result in different morphologies during island nucleation will determine the successful utilization of these islands in zero-dimensional (0D) devices. Island shapes, aspect ratios, morphologies, and coherence (incoherence) all play a role into the electronic-optic-magnetic properties of selfforming semiconductor quantum dots.Recent reports show ripening [7] behavior during island formation in Ge͞Si and after annealing in InGaAs͞GaAs QDs. An in situ study of the evolution of island growth in Ge͞Si found an optimum range in uniformity [8] during the evolution to the stable dome-shaped configuration. Other reports show the coexistence of different types of islands [9] and a shape transition from small pyramid-shaped islands to dome-shaped islands [10]. In InGaAs͞GaAs QD formation, ripening has also been observed upon annealing, which can be partially suppressed by steps in miscut substrates [11]. Ripening in QDs would have obvious disadvantages for applications of island-based devices; therefore, determining if stable islands can be achieved is of both practical and fundamental interest.Studies using surfactants in the growth of Ge͞Si have produced striking results, from the total suppression of the S-K transformation [12,13], to different critical thicknesses [14] and island shapes [15]. It is plausible that similar surfactantlike effects might explain the present controversy surrounding the different island shapes reported in the InAs͞GaAs system.Kinetic barriers for island formation have enabled 2D growth of InGaAs at low temperature [16]. Here we report a partial suppression of the S-K transformation; however, our results can be explained by an of...

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“…7 dots on vicinal substrates is smaller than that of dots on exact substrates [10], the better optical properties of dots on vicinal substrates is attributed to better material quality. On vicinal substrates, the binding effect of the step edges can limit the possible size of QDs [21]. Thus the number of plastically relaxed dots which act as nonradiative centers is reduced, leading to an increase of radiative recombination.…”

Section: Article In Pressmentioning

confidence: 99%

Growth of InAs quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition and their optical properties

Liu

Zhu

Pan

et al. 2006

Journal of Crystal Growth

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Suppression of Ostwald ripening inIn0.5Ga0.5Asquantum dots on a vicinal (100) substrate

Cited by 63 publications

References 17 publications

Structural evolution of ZnSe/ZnS quantum dots during growth interruptions under hydrogen flows

Structural evolution of ZnSe/ZnS quantum dots during growth interruptions under hydrogen flows

Stable and Metastable InGaAs/GaAs Island Shapes and Surfactantlike Suppression of the Wetting Transformation

Growth of InAs quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition and their optical properties

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