Suppression of random dopant-induced threshold voltage fluctuations in sub-0.1-μm MOSFET's with epitaxial and δ-doped channels

Asenov, A.; Saini, Subhash

doi:10.1109/16.777162

Cited by 153 publications

(73 citation statements)

References 24 publications

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“…This is now regarded as the correct interpretation of the RTN amplitudes, with the caution to add the actual main source of percolation: random dopant fluctuation (RDF). In fact, statistical variation in number and position of dopants was known to affect MOSFET parameters such as V T and subthreshold slope [105][106][107][108], and was shown to have a significant impact on RTN in [109] and in [110,111], where large amplitude values compatible with experimental data were reported.…”

Section: Rtn Amplitudesupporting

confidence: 73%

Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices

2017

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Abstract:We review the state-of-the-art in the understanding of planar NAND Flash memory reliability and discuss how the recent move to three-dimensional (3D) devices has affected this field. Particular emphasis is placed on mechanisms developing along the lifetime of the memory array, as opposed to time-zero or technological issues, and the viewpoint is focused on the understanding of the root causes. The impressive amount of published work demonstrates that Flash reliability is a complex yet well-understood field, where nonetheless tighter and tighter constraints are set by device scaling. Three-dimensional NAND have offset the traditional scaling scenario, leading to an improvement in performance and reliability while raising new issues to be dealt with, determined by the newer and more complex cell and array architectures as well as operation modes. A thorough understanding of the complex phenomena involved in the operation and reliability of NAND cells remains vital for the development of future technology nodes.

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Section: Rtn Amplitudesupporting

confidence: 73%

Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices

2017

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“…The random dopant-induced parameter fluctuations can be substantially reduced in MOSFET architectures with epitaxial channels and delta-doping [18]. These architectures have additional benefits in terms of optimal threshold voltage control and improved mobility [19][20][21][22].…”

Section: Fluctuation Resistant Mosfet Architecturesmentioning

confidence: 98%

Statistical 3D ‘atomistic’ simulation of decanano MOSFETs

Asenov

Slavcheva

Brown

et al. 2000

Superlattices and Microstructures

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A 3D statistical 'atomistic' simulation technique has been developed to study the effect of the random dopant induced parameter fluctuations in aggressively scaled MOSFETs. Efficient implementation of the 'atomistic' simulation approach has been used to investigate the threshold voltage standard deviation and lowering in the case of uniformly doped MOSFETs, and in fluctuation-resistant architectures utilising epitaxial-layers and delta-doping. The effect of the random doping in the polysilicon gate on the threshold voltage fluctuations has also been thoroughly investigated. The influence of a single-charge trapping on the channel conductivity in decanano MOSFETs is studied in the 'atomistic' framework as well. Quantum effects are taken into consideration in our 'atomistic' simulations using the density gradient formalism.

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“…A rather systematic analysis of the random dopant induced threshold voltage fluctuations in ultra-small metal-oxide-semiconductor field-effect transistors (MOSFETs) was carried out by Asenov [81] using 3D drift-diffusion device simulations and confirming previous results. Recent simulation experiments by Asenov and Saini [82] have shown that discrete impurity effects are significantly suppressed in MOSFETs with a δ-doped channel.…”

Section: Discrete Impurity Effectsmentioning

confidence: 99%

Quantum and Coulomb Effects in Nano Devices

Vasileska¹,

Khan²,

Ahmed³

et al. 2011

Nano-Electronic Devices

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In state of the art devices, it is well known that quantum and Coulomb effects play significant role on the device operation. In this paper we demonstrate that a novel effective potential approach in conjunction with a Monte Carlo device simulation scheme can accurately capture the quantummechanical size quantization effects. We also demonstrate, via proper treatment of the short-range Coulomb interactions, that there will be significant variation in device design parameters for devices fabricated on the same chip due to the presence of unintentional dopant atoms at random locations within the channel.

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Suppression of random dopant-induced threshold voltage fluctuations in sub-0.1-μm MOSFET's with epitaxial and δ-doped channels

Cited by 153 publications

References 24 publications

Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices

Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices

Statistical 3D ‘atomistic’ simulation of decanano MOSFETs

Quantum and Coulomb Effects in Nano Devices

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