2020
DOI: 10.1109/jlt.2020.3017208
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Suppression of Relative Intensity and Mode Partition Noises in Orthogonally Polarized Dual-Wavelength VCSEL

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Cited by 3 publications
(3 citation statements)
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“…Transverse modes will compete in inhomogeneous carrier distribution to affect the dynamic response in VCSELs. with the designs of L-OA-7.5/S-OA-7.5 increase the RIN value [41,42], as confirm Figure 7. At a high mode intensity point, the stimulated recombination depletes the local carriers and produces a hole in the carrier distribution.…”
Section: Rin and Mpn Of The Mm-vcsels With Different Designssupporting
confidence: 62%
See 1 more Smart Citation
“…Transverse modes will compete in inhomogeneous carrier distribution to affect the dynamic response in VCSELs. with the designs of L-OA-7.5/S-OA-7.5 increase the RIN value [41,42], as confirm Figure 7. At a high mode intensity point, the stimulated recombination depletes the local carriers and produces a hole in the carrier distribution.…”
Section: Rin and Mpn Of The Mm-vcsels With Different Designssupporting
confidence: 62%
“…Because of the larger optical volume and lower photon density, the higher RIN values are observed for the MM-VCSELs with the larger oxide aperture from the experimental results. At the low bias current, the lower damping factor and lower resonance frequency induced by the lower photon density for the MM-VCSEL with the designs of L-OA-7.5/S-OA-7.5 increase the RIN value [41,42], as confirmed by Figure 7. GHz/mA 0.5 .…”
Section: Rin and Mpn Of The Mm-vcsels With Different Designsmentioning
confidence: 83%
“…Obviously, the relaxation oscillation peak is upshifted to the high frequency. Its power is gradually reduced as the bias current increases [33], [34]. This phenomenon can effectively suppress the noise, which is beneficial for transmission.…”
Section: A the Basic Characteristic Of The Dm-vcselmentioning
confidence: 97%