Suppression of weak localization due to AlN interlayer in AlGaN/GaN 2DEG

Enhanced Shubnikov–de Haas Oscillations in High Mobility InAlN/GaN Two-Dimensional Electron Gas

“…Here, MR is identified as MR = [ R xx ( B ) – R xx ( o )]/ R xx ( B ) × 100. At very low magnetic fields (inset of Figure (a)), the longitudinal resistance exhibits a rapid decrease, attributed to weak localization (WL), a phenomenon commonly observed in disordered semiconductor systems. , As the magnetic field (B) increases, the degeneracy of Landau levels (LL) rises, causing LL to intersect the Fermi level and leading to oscillations in the electronic density of states at the Fermi level. This phenomenon, observed in various electrical properties, is referred to as quantum oscillation .…”

“…However, the distinct bond lengths and growth temperatures of InN and AlN present numerous challenges in producing high-quality InAlN/GaN heterostructures . It is noteworthy that the relatively lower electron mobility observed in InAlN/GaN heterostructures imposes constraints on the RF performance of devices. − Therefore, achieving the desired performance hinges on gaining a fundamental understanding of this high-mobility InAlN/GaN heterostructure system.…”

“…Transport properties serve as a crucial tool to understand the scattering mechanisms in the two-dimensional electron gas (2DEG) channel effectively. Various characterization techniques have been employed to ensure the production of high-quality samples. − Magnetoresistance measurements in quantum transport serve as a powerful tool for characterizing compound semiconductors, facilitating a deeper understanding of their electronic properties. − Quantum oscillations and their scattering phenomena have been extensively explored in various GaN based heterostructures. ,,− However, the quantum transport behaviors in this high-mobility InAlN/GaN heterostructure have not been widely reported. In particular, study on the InAlN/GaN 2DEG systems with high mobility remains a long-standing challenge due to growth challenges.…”

Growth, Structural, and Electrical Properties of Spin Coated LaNiO3 Conducting Oxide

“…This means that there is negligible change in the carrier charge concentrations [17]. Catalan has also termed such type of magnetoresistance behavior can be due to core dominated Colossal Magnetoresistance (CMR) effect and Maxwell -Wagner polarization effect [17][18][19].…”

Non-uniform magnetic fields for single-electron control

“…The field of electron quantum optics studies and applies electromagnetic (EM) field-controlled phenomena for manipulating electron states in solid-state quantum systems. [1][2][3][4][5] Ideally, transport theories should describe both processes governing electron trajectories and wave phenomena such as interference and diffraction in multiple dimensions. Theories based on EM potentials rely on formal mathematical apparatus related to the choice of scalar and vector potentials, which, however, obscures the physical aspects and thus the heuristic understanding of electron evolution.…”