Supramolecular block copolymers: graphene oxide composites for memory device applications

Abstract

Bistable resistive switching characteristics obtained using a supramolecular hybrid route to hydrogen-bonded block copolymers (BCP) and graphene oxide (GO) as charge storage materials are reported for write-once-read-many-times (WORM) memory devices.

Enhancement of memory windows in Pt/Ta2O5−x/Ta bipolar resistive switches via a graphene oxide insertion layer

“…Furthermore, the GO has a higher resistivity feature, enabling the use of GO in resistive switching devices as additional voltage drop layer. In our work, the GO layer did not show the resistive switching behavior that was similar to the results announced by Yu et al [16]. Therefore, to verify the ability to control an additional memory feature of the GO layer, a switching device including a GO layer with a relatively highly resistive features acting as a voltage drop layer was examined.…”

“…In our work, the resistance of the GO layer was greater than that of the Ta 2 O 5 − x layer [19]. Furthermore, the GO is well-known as an insulating layer that does not lead to the resistive switching, compared with other oxide materials [16]. Fig.…”

Block copolymer–nanoparticle composites: Structure, functional properties, and processing

“…BCPs offer a novel way to integrate such novel NPs into various applications, and enable new uses for existing NPs. An improved knowledge of particle-polymer enthalpic and entropic contributions to the total free energy of the BCP-NP co-assembly can provide a solid foundation for the design and development of multifunctional BCP-NP hybrid materials that can find applications in electronic devices [347] (Top) Ratio of interface volume (defined in the Introduction section) to the particle volume (V interface /V particle ) is plotted against the particle aspect ratio for various particle sizes (δ);…”

Direct Observation of Conducting Nanofilaments in Graphene‐Oxide‐Resistive Switching Memory

“…Among these, graphene oxide (GO), a graphene sheet decorated with oxygen groups (epoxide, hydroxyl, and carboxyl) on both sides, is one of the most promising candidates owing to its easy methods such as drop casting, spin coating, Langmuir-Blodgett (LB) deposition, and vacuum fi ltration required for the fabrication of uniform thin fi lms. [ 17 ] Besides, the switching properties of GO thin fi lms can be tuned by changing their chemical functionalities through a reduction process [ 18 ] or by mixing with other materials such as polymers, [ 19,20 ] nanoparticles, [ 21 ] and MoS 2 .[ 22 ] Although various GO-based memory devices have been suggested by research groups, [23][24][25][26][27][28] the exact mechanism of bistable resistive switching behavior in GO thin fi lms is still not fully understood.Previously, our group reported the development of a fl exible nonvolatile memory device based on spin-casted GO thin fi lms. [ 29 ] We presented the resistive switching mechanism as the formation and rupture of conducting nanofi laments formed at the amorphous top interface layer (TIL) between a GO thin fi lm and an Al top electrode.…”