Surface action mechanism and planarization effect of sarcosine as an auxiliary complexing agent in copper film chemical mechanical polishing

Zhou, Jiakai; Niu, Xinhuan; Yang, Chun‐Chun; Huo, Zhaoqing; Lu, Yanan; Wang, Zhi; Cui, Yaqi; Wang, Ru

doi:10.1016/j.apsusc.2020.147109

Cited by 60 publications

(17 citation statements)

References 51 publications

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“…UV-vis can measure the absorbance of different solutions, and the absorbance can reflect the change of the product in the solution. 23 The absorbance curves of 10 mmol l −1 CuSO 4 with different corrosion inhibitors are shown in Figs. 1 and 2 shows the appearance of the solutions.…”

Section: Resultsmentioning

confidence: 99%

Corrosion Inhibition and the Synergistic Effect of Three Different Inhibitors on Copper Surface

Gao

Zheng

et al. 2022

ECS J. Solid State Sci. Technol.

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Copper(Cu) has been an interconnect material widely used in giant-large scale integrated circuits (GLSI). Corrosion inhibition is a key factor to ensure global planarization of Cu in the chemical mechanical planarization slurry. Here, three selected inhibitors BTA(Benzotriazole), TAZ(1,2,4-triazole), and MBO( 2-Benzoxazolethione) were investigated for their inhibition behaviors and synergy on the Cu surface. The results show that they are all effective Cu inhibitors in alkaline solutions. MBO loses its inhibition ability in H2O2, but BTA and TAZ do not. The calculated synergistic parameters of BTA/TAZ is 0.1763, X-ray photoelectron spectroscopy, and UV-Via experiments show that the antagonism between them is caused by two competitive reactions due to the similar adsorption mechanism: one is the competition for the adsorption site on the surface, and the other is the competition of copper ions that affects the formation of Cu(I)-BTA. The calculated synergistic parameter of BTA/MBO is 1.7763, the synergy between them is obvious.

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Section: Resultsmentioning

confidence: 99%

Corrosion Inhibition and the Synergistic Effect of Three Different Inhibitors on Copper Surface

Gao

Zheng

et al. 2022

ECS J. Solid State Sci. Technol.

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“…The molecular structures of CA and BTA were first optimized using the generalized gradient approximation (GGA) -BLYP functional with a double numerical plus polarization (DNP) basis set. 19,20 The real space cutoff radius was set to 4.0 Å and the SCF tolerance was set to 1.0 × 10 6 . 21 Vibrational analysis was then conducted to optimize the molecular structures of CA and BTA and ensure that the tested molecules reached the minimum point of potential energy.…”

Section: Methodsmentioning

confidence: 99%

Synergistic Effect of Composite Complex Agent on BTA Removal in Post-Cu-CMP: Experimental and Theoretical Analysis

Du,

Wang,

Wang

et al. 2023

ECS J. Solid State Sci. Technol.

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Nowadays the development of nanoscale-interconnected integrated circuit chips makes the chemical mechanical polishing (CMP) and post-CMP cleaning more challenging. In general, organic residues such as benzotriazole (BTA) can adsorb on the wafer surface after CMP process and form thin films to prevent the contact between cleaning solution and the wafer surface, which thus can seriously affect the post-CMP cleaning process. And the efficient removal of BTA remains problematic due to the potential introduction of additional impurities. Therefore, a new alkaline cleaning solution based on citric acid (CA) was proposed to improve the removal efficiency of BTA. Results exhibit that the cleaning efficiency of BTA residues can reach 98.86% with 400 ppm tetraethyl ammonium hydroxide (TEAH) and 0.6 wt% CA (pH = 10.5). X-ray photoelectron spectroscopy (XPS) measurements show that the cleaning solution can coordinate with copper ions to break the ionization balance of Cu-BTA. In addition, the electronic properties and reaction sites on copper surface were determined by quantum chemical calculation and density functional theory (DFT). The theoretical analysis indicates that CA has hydroxyl and carboxyl functional groups, and its presence with TEAH can promote the complexation of Cu ions, which accelerates the breakage of Cu-BTA and the desorption of BTA from the copper surface.

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“…The maximum absorbance of solution appears at around 810 nm. It is obvious that the peak at 810 nm corresponding to the Cu(SO)4 [33]. After the addition of 2.5 wt% glycine, a peak is observed at 646 nm, presumably owing to the generation of Cu-glycine complex.…”

Section: Absorption Behavior Of Tta On the Cu Surfacementioning

confidence: 97%

Surface corrosion inhibition effect and action mechanism analysis of 5-methyl-benzotriazole on cobalt-based copper film chemical mechanical polishing for GLSI

Yan

Niu

Luo

et al. 2022

Preprint

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With integrated circuit (IC) technology nodes below 20 nm, the chemical mechanical polishing (CMP) of cobalt (Co)-based copper (Cu) interconnection has been gradually changed to one-step polishing, which requires rapid removal rate (RR) of Cu while controlling the height differences of concave and convex areas on the Cu surface, and finally achieving global planarization. Co as the barrier material is also required a lower RR to ensure a high Cu/Co removal rate selection ratio. Therefore, choosing the appropriate inhibitor in the slurry is extremely important. The corrosion inhibitor 5-methyl-benzotriazole (TTA) was thoroughly examined in this study for its ability to prevent corrosion on Cu film as well as its mode of action. The experimental results showed that TTA can effectively inhibit the removal of Cu under both dynamic and static conditions, which was also confirmed by scanning electron microscopy (SEM) and atomic force microscopy (AFM) tests. The corrosion inhibition effect and mechanism of TTA was further revealed by open circuit potential (OCP), polarization curve, adsorption isotherm, quantum chemical calculation, UV-Visible and X-ray photoelectron spectroscopy (XPS) tests. It was found that TTA can inhibit the corrosion of Cu by physical and chemical adsorption on the Cu surface, which is conductive to obtain excellent planarization properties. At the same time, it was also found TTA can also inhibit the corrosion of Co by forming Co-TTA and promoting the conversion of Co(OH)2 to Co3O4, and a Cu/Co removal rate selection ratio of 104 was obtained, which provides a suitable corrosion inhibitor for the polishing of Co-based Cu interconnection CMP and has a broad application prospect.

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Surface action mechanism and planarization effect of sarcosine as an auxiliary complexing agent in copper film chemical mechanical polishing

Cited by 60 publications

References 51 publications

Corrosion Inhibition and the Synergistic Effect of Three Different Inhibitors on Copper Surface

Corrosion Inhibition and the Synergistic Effect of Three Different Inhibitors on Copper Surface

Synergistic Effect of Composite Complex Agent on BTA Removal in Post-Cu-CMP: Experimental and Theoretical Analysis

Surface corrosion inhibition effect and action mechanism analysis of 5-methyl-benzotriazole on cobalt-based copper film chemical mechanical polishing for GLSI

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