Surface analysis for Si-wafers using total reflection X-ray fluorescence analysis

Berneike, W.; Knoth, J.; Schwenke, H.; Weisbrod, U.

doi:10.1007/bf00572369

Cited by 31 publications

(6 citation statements)

References 3 publications

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“…Theoretically, the fluorescence yield -glancing angle curve from plated Ni film crosses the fluorescence yieldglancing angle curve at a glancing angle of ~ 1.3 mrad [7,17,18,23]. At that glancing angle response factors are about the same for both types of contamination.…”

Section: Calibration and Quantificationmentioning

confidence: 93%

“…Measurements were carried out at the position of the integrated fluorescence maxima, conditions were optimized due to ref. [7]. Measurements and sample preparation were accomplished under clean room conditions due to Cl.…”

Section: Apparatus and Experimentalmentioning

confidence: 99%

“…Sputter-or vapor-phase-deposited Ni layer on Si wafers [6] 5. Microdroplets of controlled dimensions on clean and planar Si surfaces [7] Spin-coated and IAP standard reference samples must be certified with complementary methods such as nitrogenbeam Rutherford backscattering (RBS) [8] or secondary ion mass spectrometry (SIMS) [9] or vapor phase decomposition (VDP) [10][11][12]. The dose of ion-implanted metals or the amount of sputter-deposited metals can be controlled by adjusting the process parameters.…”

Section: Introductionmentioning

confidence: 99%

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Accurate calibration of TXRF using microdroplet samples

Fabry

Pahlke

Kotz

1996

Analytical and Bioanalytical Chemistry

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TXRF has been applied in combination with VPD to the analysis of trace impurities in the native oxide layer of Si wafer surfaces down to the range of 10(8) atoms. cm(-2). Proper quantification of VPD/TXRF data requires calibration with microdroplet standard reference wafers. The precision of calibration function has been evaluated and found to allow quantification at a high level of 3 sigma confidence with microdroplet standard reference.

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Section: Calibration and Quantificationmentioning

confidence: 93%

Section: Apparatus and Experimentalmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Accurate calibration of TXRF using microdroplet samples

Fabry

Pahlke

Kotz

1996

Analytical and Bioanalytical Chemistry

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“…7 For these studies, an incident angle of approximately one-half the critical angle is used. 7 For these studies, an incident angle of approximately one-half the critical angle is used.…”

Section: Methodsmentioning

confidence: 99%

Total reflection x-ray fluorescence analysis of planarized semiconductor product wafers

Lavoie

Miles

1996

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Articles you may be interested inDevelopment of a multifunctional surface analysis system based on a nanometer scale scanning electron beam: Combination of ultrahigh vacuumscanning electron microscopy, scanning reflection electron microscopy, Auger electron spectroscopy, and xray photoelectron spectroscopy Rev.A soft xray standing wave measurement system for analyzing compound semiconductor surfaces prepared by molecular beam epitaxy Rev. Sci. Instrum. 67, 3182 (1996); 10.1063/1.1147442 Hightemperature annealings of Sb and Sb/B heavily implanted silicon wafers studied by near grazing incidence fluorescence extended xray absorption fine structure Calibration issues for total reflection xray fluorescence analysis of surface metallic contamination on silicon

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“…Легированные слои создавались в пластинах кремния p-типа проводимости с удельным сопротивлением 10 Ом • см ионной имплантацией бора при формировании p-слоя, фосфора -при формировании n-слоя. Содержание технологических примесей на поверхности пластин кремния исследовалось методом полного внешнего отражения рентгеновского излучения на установке Rigaku TXRF 3750 [3].…”

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INVESTIGATION OF INFLUENCE OF TECHNOLOGICAL IMPURITIES ON THE I–V CHARACTERISTICS OF THE BIPOLAR n–p–n-TRANSISTOR

Оджаев¹,

Панфиленко²,

Pyatlitski³

et al. 2018

Vescì Akademìì navuk Belarusì. Seryâ fizika-tehničnyh navuk

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Contamination of the monocrystal silicon with technological impurities in the devices fabrication process exerts a considerable influence on the electro-physical characteristics of the bipolar n–p–n-transistors. Revelation of the causes of the labile reproducibility of the basic characteristics of the bipolar planar n–p–n-transistors is vital for the purpose of establishing the factors, determining reliability and stability of the operational parameters of the integrated circuits. There were investigated I–V characteristics of the various lots of the bipolar n–p–n-transistors, fabricated under the epitaxialplanar technology as per the similar process charts with the identical used technological materials, however, at different times. It is established that the electro-physical characteristics of the bipolar n–p–n-transistors substantially depend on the contents of the technological impurities in the substrate material. Availability of the high concentration of the generation-recombination centers, related to the metallic impurities, results both in increase of the reverse current of the collector – base junction of the transistors and the significant reduction of the breakdown voltage of the collector junction. The most probable cause of deterioration of the electro-physical parameters of the bipolar n–p–n-transistors is the material contamination with the technological impurities (such, as Fe, Cl, Ca, Cu, Zn and others) during the production process of the devices fabrication. The sources of impurity may be both the components and sub-assemblies of the technological units and the materials and reagents under usage.

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Surface analysis for Si-wafers using total reflection X-ray fluorescence analysis

Cited by 31 publications

References 3 publications

Accurate calibration of TXRF using microdroplet samples

Accurate calibration of TXRF using microdroplet samples

Total reflection x-ray fluorescence analysis of planarized semiconductor product wafers

INVESTIGATION OF INFLUENCE OF TECHNOLOGICAL IMPURITIES ON THE I–V CHARACTERISTICS OF THE BIPOLAR n–p–n-TRANSISTOR

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