As an interesting layered material, molybdenum disulfi de (MoS 2 ) has been extensively studied in recent years due to its exciting properties. However, the applications of MoS 2 in optoelectronic devices are impeded by the lack of high-quality p-n junction, low light absorption for mono-/multilayers, and the diffi culty for large-scale monolayer growth. Here, it is demonstrated that MoS 2 fi lms with vertically standing layered structure can be deposited on silicon substrate with a scalable sputtering method, forming the heterojunctiontype photodetectors. Molecular layers of the MoS 2 fi lms are perpendicular to the substrate, offering high-speed paths for the separation and transportation of photo-generated carriers. Owing to the strong light absorption of the relatively thick MoS 2 fi lm and the unique vertically standing layered structure,