Surface and interface topography of amorphous SiO<sub>2</sub>/crystalline Si(100) studied by X-ray diffraction

Brügemann, L.; Bloch, Robert G.; Press, W.; Gerlach, P.

doi:10.1088/0953-8984/2/45/003

Cited by 17 publications

(11 citation statements)

References 22 publications

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“…During a 0-20 scan, the measured intensity is then the sum of the decreasing intensity coming from the direct beam and of the increasing intensity reflected by the sample, as shown for a typical case in Fig. 4 and observed by Brugemann, Bloch, Press & Gerlach (1990). In addition, a further complication is that the direct beam is no longer at the position 20 = 0 in the presence of the sample, although it was perfectly centered in its absence.…”

Section: Iii1 Determination Of the Real Thickness Of The Beammentioning

confidence: 95%

The correction of geometrical factors in the analysis of X-ray reflectivity

Gibaud¹,

Vignaud²,

Sinha³

1993

Acta Crystallogr A Found Crystallogr

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X-ray reflectivity is a powerful technique to study electron density profiles in the direction normal to the surface of a fiat sample. As usual in scattering experiments, where the phase information is lost, it is necessary to build a model that can be used to calculate the reflectivity for comparison with the measured reflectivity. In the calculations, it is necessary to correct the calculated reflectivity from geometrical and resolution-function factors, which play a major role at low angles of incidence. These factors are presented in this paper and the corrected calculated intensity is compared with the measured reflectivity of a commercial silicon wafer and of a niobium film on a sapphire substrate.

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Section: Iii1 Determination Of the Real Thickness Of The Beammentioning

confidence: 95%

The correction of geometrical factors in the analysis of X-ray reflectivity

Gibaud¹,

Vignaud²,

Sinha³

1993

Acta Crystallogr A Found Crystallogr

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“…To measure the intensity distribution around a reciprocal-lattice point (i.e. the resolution) for different values of Qo, we took as samples Silll (Bdigemann, Bloch, Press & Gerlach, 1990), GaAs004 (Bloch, Bahr, Olde, Briigemann & Press, 1990) and, in the range of small IQol, a thick amorphous germanium layer on silicon (Bloch, Briigemann & Press, 1989).…”

Section: Resultsmentioning

confidence: 99%

Resolution investigations of X-ray three-crystal diffractometers

Brügemann¹,

Bloch²,

Press³

et al. 1992

Acta Cryst Sect A

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Therefore, the diffraction pattern is composed of the incoherent addition of all the electrons with different energy losses hto and momentum transfers, weighted by the probability functions. For the energy-filtered diffraction patterns of a narrow energy window, the integration of energy in (A.12) is dropped. It is important to note that (A.12) has the same form as (10) for localized inelastic scattering, thus the corresponding T function can be readily written as (23).References BIRD, D. M. & WRIGHT, A. G. (1989). Acta Cryst. A45, 104-109. BORN, M. (1942). Rep. Prog. Phys. 9, 294-333. COWLEY, J. M. (1988). Acta ~ryst. A44, 847-855. COWLEY, J. M. & MOODIE, A. F. (1957). Acta Cryst. 10, 609-619. DOYLE, P. A. (1970 Phys. 36, 2099-2103. WHELAN, M. J. (1965b). J. Appl. Phys. 36, 2103-2110. YOSHIOKA, H. (1957). J. Phys. Soc. Jpn, 12, 618-628. Acta Cryst. (1992 AbstractThe object of this study is the resolution of a threecrystal difffractometer (TCD) using perfect crystals as monochromator and analyser. It relates to the resolution as a function of the scattering vector Q. This information is crucial for the interpretation of highresolution X-ray diffraction data obtained very close to reciprocal-lattice points. In this light we present the experimentally determined resolution of TCDs 0108-7673/92/050688-05506.00O 1992 International Union of Crystallography

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“…We also provide a quantitative description of the roughness for use in quantifying its impact on TFT performance. The roughness of the Si/SiO 2 interface has been studied extensively [31][32][33][34] . The results universally show that the interface roughness is determined by the roughness of the Si surface prior to a thermal oxidation process, even to the point of preserving the original stepped surface structure at the atomic scale.…”

Section: Correlation Function Background and Literaturementioning

confidence: 99%

“…The results universally show that the interface roughness is determined by the roughness of the Si surface prior to a thermal oxidation process, even to the point of preserving the original stepped surface structure at the atomic scale. Fewer studies report the characteristics of the oxide/air interface, but for thick thermal oxides, the top surface is found to be considerably rougher than the Si/oxide interface 22,24,32 with typical rms roughness of 0.3 nm or more.…”

Section: Correlation Function Background and Literaturementioning

confidence: 99%

Nano Electronic Materials

2017

Jpn. J. Appl. Phys.

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This thesis explores fabrication methods and characterization of novel materials used in field effect transistors, including metallic nanowires, carbon nanotubes, and graphene.Networks of conductive nanotubes are promising candidates for thin film electrode alternatives due to their desirable transparency, flexibility, and potential for large-scale processing. Silver nanowire and carbon nanotube networks are evaluated for their use as thin film electrode alternatives. Growth of silver nanowires in porous alumina membranes, dispersion onto a variety of substrates, and patterning is described. Metallic carbon nanotubes are suspended in aqueous solutions, airbrushed onto substrates, and patterned. The conductivity and transparency of both networks is evaluated against industry standards.Graphene is a two dimensional gapless semimetal that demonstrates outstanding room temperature mobilities, optical transparency, mechanical strength, and sustains large current densities, all desirable properties for semiconductors used in field effect transistors. Graphene's low on/off ratio and low throughput fabrication techniques have yet to be overcome before it becomes commercially viable.Silicon oxide substrates are common dielectrics in field effect transistors and instrumental in locating mechanically exfoliated graphene. The morphology of two different silicon oxides have been studied statistically with atomic force microscopy and scaling analysis. Tailoring the physical properties of these substrates may provide a control of graphene's electrical properties.A silicon oxide substrate may also be chemically altered to control the properties of graphene. I have modified silicon oxide with self-assembled monolayers with various terminal groups to control the field near the graphene. I characterize the monolayers with atomic force microscopy, x-ray photospectroscopy, and contact angles. I characterize graphene on these substrates using Raman microscopy and transport measurements.Finally, I examine low frequency noise in graphene field effect transistors on conventional silicon oxide substrates. As devices become smaller, the signal to noise ratio of these devices becomes important. Low frequency noise occurs on long time scales and must be controlled for device stability. I measure novel behavior of low frequency noise in multiple graphene devices. The noise may be described electronhole puddles in the graphene that are caused by trapped charges near the surface of silicon oxide. NANOELECTRONIC MATERIALS

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Surface and interface topography of amorphous SiO₂/crystalline Si(100) studied by X-ray diffraction

Cited by 17 publications

References 22 publications

The correction of geometrical factors in the analysis of X-ray reflectivity

The correction of geometrical factors in the analysis of X-ray reflectivity

Resolution investigations of X-ray three-crystal diffractometers

Nano Electronic Materials

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Surface and interface topography of amorphous SiO2/crystalline Si(100) studied by X-ray diffraction

Cited by 17 publications

References 22 publications

The correction of geometrical factors in the analysis of X-ray reflectivity

The correction of geometrical factors in the analysis of X-ray reflectivity

Resolution investigations of X-ray three-crystal diffractometers

Nano Electronic Materials

Contact Info

Product

Resources

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Surface and interface topography of amorphous SiO₂/crystalline Si(100) studied by X-ray diffraction