Surface atoms core-level shifts in single crystal GaAs surfaces: Interactions with trimethylaluminum and water prepared by atomic layer deposition

Pi, Tun‐Wen; Lin, Hsuan-Yin; Chiang, T. H.; Liu, Y.T.; Chang, Yu‐Cheng; Lin, Tsung-Hsien; Wertheim, G. K.; Kwo, J.; Hong, M.

doi:10.1016/j.apsusc.2013.07.140

Cited by 20 publications

(21 citation statements)

References 54 publications

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“…In the established reports, we have demonstrated that the As(1), As(2), and As(3) atoms are parts of the As 3d core level spectrum with the bulk component. 17,18 The detailed energy positions of the surface As atoms are shown in Figure 3b. The As(1) component predominates the emission on the high BE side and is shifted by 0.14 eV, whereas both As(2) and As(3) components are on the low BE side and are shifted by 0.19 and 0.59 eV, respectively.…”

Section: Resultsmentioning

confidence: 99%

Atomic Nature of the Growth Mechanism of Atomic Layer Deposited High-κ Y₂O₃ on GaAs(001)-4 × 6 Based on in Situ Synchrotron Radiation Photoelectron Spectroscopy

et al. 2018

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Y 2 O 3 was in situ deposited on a freshly grown molecular beam epitaxy GaAs(001)-4 × 6 surface by atomic layer deposition (ALD). In situ synchrotron radiation photoemission was used to study the mechanism of the tris(ethylcyclopentadienyl)yttrium [Y(CpEt) 3 ] and H 2 O process. The exponential attenuation of Ga 3d photoelectrons confirmed the laminar growth of ALD-Y 2 O 3 . In the embryo stage of the first ALD half-cycle with only Y(CpEt) 3 , the precursors reside on the faulted As atoms and undergo a charge transfer to the bonded As atoms. The subsequent ALD half-cycle of H 2 O molecules removes the bonded As atoms, and the oxygen atoms bond with the underneath Ga atoms. The product of a line of Ga–O–Y bonds stabilizes the Y 2 O 3 films on the GaAs substrate. The resulting coordinatively unsaturated Y–O pairs of Y 2 O 3 open the next ALD series. The absence of Ga 2 O 3 , As 2 O 3 , and As 2 O 5 states may play an important role in the attainment of low interfacial trap densities ( D it ) of <10 12 cm –2 eV –1 in our established reports.

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Section: Resultsmentioning

confidence: 99%

Atomic Nature of the Growth Mechanism of Atomic Layer Deposited High-κ Y₂O₃ on GaAs(001)-4 × 6 Based on in Situ Synchrotron Radiation Photoelectron Spectroscopy

et al. 2018

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“…Tremendous progress has been achieved in the past few years in preparing and understanding dielectric/III-V interfaces electronically 33 and electrically. 34 , 35 Perfecting the high-κ dielectric/III-V interfaces to lower the D it and to improve the thermal stability at high temperatures has resulted in improved device performance.…”

Section: The Dielectric/iii-v Semiconductor Interfacementioning

confidence: 99%

III–V compound semiconductor transistors—from planar to nanowire structures

et al. 2014

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“…Different from the RHEED studies of ALD-Y 2 O 3 on GaAs(111)A, as discussed above, those of ALD-Al 2 O 3 on GaAs(111)A, from the initial ALD oxide growth to thicker films, are non-crystalline (not shown). Our earlier work indicated that 10 cycles of ALD-Al 2 O 3 were not able to passivate 100% of a GaAs(001)-4 × 6 surface [ 38 ]. Therefore, the initial three cycles of ALD-Al 2 O 3 on sample B would leave bare (not passivated) patches of GaAs(111)A for the subsequent three cycles of ALD-Y 2 O 3 to bond with, resulting in mixed coverages of Al 2 O 3 and Y 2 O 3 on top of GaAs(111)A on sample B.…”

Section: Resultsmentioning

confidence: 99%

“…Y–O–Ga prevented the interdiffusion between Y 2 O 3 and GaAs upon RTA to high temperatures, regardless of ALD- or MBE-Y 2 O 3 , as evidenced from the attainment of low D it and a low electrical leakage current in the Y 2 O 3 /GaAs(001)-4 × 6 [ 40 , 41 ]. Note that the top surface atoms of GaAs(111)A are Ga [ 36 , 42 ], while those of (001)-4 × 6 are As [ 38 , 43 ]. Therefore, forming Y–O–Ga bonding is easier for ALD-Y 2 O 3 on GaAs(111)A than that on GaAs(001).…”

Section: Resultsmentioning

confidence: 99%

Epitaxy from a Periodic Y–O Monolayer: Growth of Single-Crystal Hexagonal YAlO3 Perovskite

et al. 2020

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The role of an atomic-layer thick periodic Y–O array in inducing the epitaxial growth of single-crystal hexagonal YAlO3 perovskite (H-YAP) films was studied using high-angle annular dark-field and annular bright-field scanning transmission electron microscopy in conjunction with a spherical aberration-corrected probe and in situ reflection high-energy electron diffraction. We observed the Y–O array at the interface of amorphous atomic layer deposition (ALD) sub-nano-laminated (snl) Al2O3/Y2O3 multilayers and GaAs(111)A, with the first film deposition being three cycles of ALD-Y2O3. This thin array was a seed layer for growing the H-YAP from the ALD snl multilayers with 900 °C rapid thermal annealing (RTA). The annealed film only contained H-YAP with an excellent crystallinity and an atomically sharp interface with the substrate. The initial Y–O array became the bottom layer of H-YAP, bonding with Ga, the top layer of GaAs. Using a similar ALD snl multilayer, but with the first film deposition of three ALD-Al2O3 cycles, there was no observation of a periodic atomic array at the interface. RTA of the sample to 900 °C resulted in a non-uniform film, mixing amorphous regions and island-like H-YAP domains. The results indicate that the epitaxial H-YAP was induced from the atomic-layer thick periodic Y–O array, rather than from GaAs(111)A.

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Surface atoms core-level shifts in single crystal GaAs surfaces: Interactions with trimethylaluminum and water prepared by atomic layer deposition

Cited by 20 publications

References 54 publications

Atomic Nature of the Growth Mechanism of Atomic Layer Deposited High-κ Y₂O₃ on GaAs(001)-4 × 6 Based on in Situ Synchrotron Radiation Photoelectron Spectroscopy

Atomic Nature of the Growth Mechanism of Atomic Layer Deposited High-κ Y₂O₃ on GaAs(001)-4 × 6 Based on in Situ Synchrotron Radiation Photoelectron Spectroscopy

III–V compound semiconductor transistors—from planar to nanowire structures

Epitaxy from a Periodic Y–O Monolayer: Growth of Single-Crystal Hexagonal YAlO3 Perovskite

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Surface atoms core-level shifts in single crystal GaAs surfaces: Interactions with trimethylaluminum and water prepared by atomic layer deposition

Cited by 20 publications

References 54 publications

Atomic Nature of the Growth Mechanism of Atomic Layer Deposited High-κ Y2O3 on GaAs(001)-4 × 6 Based on in Situ Synchrotron Radiation Photoelectron Spectroscopy

Atomic Nature of the Growth Mechanism of Atomic Layer Deposited High-κ Y2O3 on GaAs(001)-4 × 6 Based on in Situ Synchrotron Radiation Photoelectron Spectroscopy

III–V compound semiconductor transistors—from planar to nanowire structures

Epitaxy from a Periodic Y–O Monolayer: Growth of Single-Crystal Hexagonal YAlO3 Perovskite

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Product

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Atomic Nature of the Growth Mechanism of Atomic Layer Deposited High-κ Y₂O₃ on GaAs(001)-4 × 6 Based on in Situ Synchrotron Radiation Photoelectron Spectroscopy

Atomic Nature of the Growth Mechanism of Atomic Layer Deposited High-κ Y₂O₃ on GaAs(001)-4 × 6 Based on in Situ Synchrotron Radiation Photoelectron Spectroscopy