1977
DOI: 10.1021/ac50013a015
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Surface characterization

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1979
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Cited by 17 publications
(9 citation statements)
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“…One of the most common process steps in integrated circuit fabrication is the water rinsing of the Si wafer. Several studies have employed surface IR absorption spectroscopy to examine this process on Si(100) surfaces ( ). For H 2 O exposure and annealing, the results indicate that an oxide forms through initial insertion into the dimer bonds followed by insertion into the back-bonds ( C1 ).…”
Section: Optical Characterization Of Surfacesmentioning
confidence: 99%
See 1 more Smart Citation
“…One of the most common process steps in integrated circuit fabrication is the water rinsing of the Si wafer. Several studies have employed surface IR absorption spectroscopy to examine this process on Si(100) surfaces ( ). For H 2 O exposure and annealing, the results indicate that an oxide forms through initial insertion into the dimer bonds followed by insertion into the back-bonds ( C1 ).…”
Section: Optical Characterization Of Surfacesmentioning
confidence: 99%
“…Reviews of surface characterization have appeared in Analytical Chemistry every two years since 1977 ( ). The field continues to grow and diversify with new surface analysis techniques as well as new applications.…”
mentioning
confidence: 99%
“…Tektronix, Incorporated, P.O. Box 500,Beaverton,Oregon 97077 This review follows the format of the previous review (641) and covers surface characterization as discussed in earlier reviews (637)(638)(639)(640). Tables are used extensively in order to summarize the material being reviewed.…”
mentioning
confidence: 99%
“…NTIS. 61 pp (1979) This review follows the same format used in the three earlier reviews (453,454,541). The references are in general restricted to English-language journals or easily available translations and the surface is defined as the gas-solid interface.…”
mentioning
confidence: 99%