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The chemical vapor deposition (CVD) and reflow of phosphosilicate glass (PSG) have been reviewed. The CVD reaction from silane and phosphine has been simulated by SOLGAS thermochemical calculations. This equilibrium calculation method predicts stoichiometric conversion of silane and phosphine. In comparison to experimental determinations, the calculations underestimate the glass phosphorus content by about 1–3 weight percent. In addition, recent observations that the reflow of PSG is greatly enhanced by the presence of a steam ambient during heating have been examined. A possible mechanism of this reflow enhancement has been discussed. Experimental evidence, which support this mechanism, by electron microprobe, FTIR, and SIMS studies of PSG films, are presented.

This paper will describe theoretical calculations of the gravitational fall of particles in vacuum as a function of pressure and particle size, and will give confirming experimental observations of particle deposition on silicon wafers in a test vacuum system. Also, using silicon wafers as test vehicles, observations will be described about the effects of wafer orientation, pumpdown and venting rates, and moving parts on the generation and behavior of particles in a vacuum system. Further confirmation of these results will be presented through the use of a modified laser particle counter in vacuum to directly measure particles in the vacuum chamber.

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