Characterization of Semiconductor Materials

Kane, Philip F.; Larrabee, Graydon B.; Knight, Stephen

doi:10.1149/1.2407352

Cited by 29 publications

(18 citation statements)

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“…All 3C pits were tetrahedral depressions into the surface with equilateral triangle sides aligned to the /11 0 0S 4H-SiC substrate direction. This is the typical shape of TEDs in the (111) surface of cubic semiconductor crystals [16]. Similar 3C pits have also been observed by Neudeck et al [17] after growth of 3C-SiC films on 4H/6H-SiC mesas and subsequent KOH etching of the as-grown films.…”

Section: Larger and Smaller Tdssupporting

confidence: 84%

Study of triangular defects and inverted pyramids in 4H-SiC 4° off-cut (0001) Si face epilayers

Shrivastava

Muzykov

Caldwell

et al. 2008

Journal of Crystal Growth

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Section: Larger and Smaller Tdssupporting

confidence: 84%

Study of triangular defects and inverted pyramids in 4H-SiC 4° off-cut (0001) Si face epilayers

Shrivastava

Muzykov

Caldwell

et al. 2008

Journal of Crystal Growth

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“…This shape is typical of dislocation etch pits commonly observed at threading edge dislocations in the (111) surface of cubic semiconductor crystals. [28] Isolated etch pits completely contained in 4H-SiC regions (of mixed polytype samples) were hexagonal with pointed bottom, as illustrated in Figure 6b. Hexagonal etch pits always appeared at the peaks of hexagonal-faceted growth hillocks associated with axial screw dislocations.…”

Section: Extended Defect Structurementioning

confidence: 91%

CVD Growth of 3C‐SiC on 4H/6H Mesas

Neudeck

Trunek

Spry

et al. 2006

Chemical Vapor Deposition

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This article describes growth and characterization of the highest quality reproducible 3C-SiC heteroepitaxial films ever reported. By properly nucleating 3C-SiC growth on top of perfectly on-axis (0001) 4H-SiC mesa surfaces completely free of atomic scale steps and extended defects, growth of 3C-SiC mesa heterofilms completely free of extended crystal defects can be achieved. In contrast, nucleation and growth of 3C-SiC mesa heterofilms on top of 4H-SiC mesas with atomic-scale steps always results in numerous observable dislocations threading through the 3C-SiC epilayer. High-resolution X-ray diffraction (HRXRD) and high resolution cross-sectional transmission electron microscopy (HRXTEM) measurements indicate non-trivial, in-plane, lattice mismatch between the 3C and 4H layers. This mismatch is somewhat relieved in the step-free mesa case via misfit dislocations confined to the 3C/4H interfacial region without dislocations threading into the overlying 3C-SiC layer. These results indicate that the presence or absence of steps at the 3C/4H heteroepitaxial interface critically impacts the quality, defect structure, and relaxation mechanisms of single-crystal heteroepitaxial 3C-SiC films.

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“…Using Vegard's law [42], the lattice constant of InGaP ternary alloys is expressed as (11) aepi(x) = XaG~p + (1 --x)ai~p. Using Vegard's law [42], the lattice constant of InGaP ternary alloys is expressed as (11) aepi(x) = XaG~p + (1 --x)ai~p.…”

Section: -Determination Of Internal Bulk Strain In the Ingap Ternary mentioning

confidence: 99%

Studies on nucleation kinetics of In1−xGaxP/GaAs by Liquid-Phase Epitaxy

1995

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Nucleation kinetics during the Liquid-Phase Epitaxial (LPE) growth of In1_ x GaxP on GaAs substrate have been studied. The behaviour of non-equilibrium solid-liquid interface between In-Ga-P solution and GaAs substrate has been analysed and hence the expression derived for the stress-induced supercooling has been incorporated in the classical heterogeneous nucleation theory. The condition for the growth of good-quality GaInP layer on GaAs substrate has been shown theoretically.PACS 68.55.Df-Liquid phase epitaxy.

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Characterization of Semiconductor Materials

Abstract: not Available.

Cited by 29 publications

References 0 publications

Study of triangular defects and inverted pyramids in 4H-SiC 4° off-cut (0001) Si face epilayers

Study of triangular defects and inverted pyramids in 4H-SiC 4° off-cut (0001) Si face epilayers

CVD Growth of 3C‐SiC on 4H/6H Mesas

Studies on nucleation kinetics of In1−xGaxP/GaAs by Liquid-Phase Epitaxy

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