Surface characterization of titanium oxide films synthesized by ion beam enhanced deposition

Biomimetic Micropatterning of Titanium Dioxide Thin Films for Gate Dielectrics

“…Hence, the peak (530.1 eV) was assigned to the deposited films. This binding energy is similar to that of TiO2 (529.9 eV [14], 530.1 eV [15]), and it indicated oxygen is negatively charged compared to neutral oxygen molecules (531.0 eV) possibly through the after Ar+ sputtering of (c).…”

Nano/micro-patterning of anatase TiO2thin film from an aqueous solution by site-selective elimination method

“…6). This binding energy is higher than that of Ti metal (454.0 eV), TiC (454.6 eV), TiO (455.0 eV), TiN (455.7 eV) and Ti 2 O 3 (456.7 eV), and similar to that of TiO 2 (458.4 -458.7 eV) [31,55,56]. This suggests that the titanium atoms in thin films are positively charged relative to that of titanium metal by formation of direct bonds with oxygen.…”

“…The O 1s spectrum was observed from the silanol regions and divided into O 1s (530.2 eV) and O 1s (532.3 eV). O 1s (532.3 eV) can be assigned to the silicon oxide layer on the surface of the silicon wafer (532.0 eV [55]), whereas the binding energy of O 1s (530.2 eV) is similar to that of TiO 2 (529.9 eV [56], 530.1 eV [55]) as observed by Shin et al [30]. This shows that oxygen is negatively charged compared with neutral oxygen molecules (531.0 eV), possibly through the formation of chemical bonds with Ti.…”

Modeling evaporation, ion-beam assist, and magnetron sputtering of TiO2 thin films over realistic timescales

“…Metal oxide thin films can be deposited using a variety of industrial scale processes, including evaporation (thermal and electron beam), ion-beam-assisted evaporation, [4][5][6] and reactive magnetron sputtering. 5,[7][8][9] In all three processes, we assume that TiO 2 reaches the surface at the correct stoichiometry, via the deposition of the species, Ti, TiO, TiO 2 , O, and O 2 .…”

“…The evaporation process involves stoichiometric deposition of TiO x ad-clusters onto the substrate, with kinetic energy typically ,1 eV. An ion source (usually argon) may be used to densify the film; this ion-beam introduces energy into the growing film 5,6 to enhance mixing. For the model of ion assist, the same arrival rate of argon was used as for the TiO 2 species (equivalent to ;1.6 Â 10 15 atoms/cm 2 /s), but we expect the majority of argon to leave the surface.…”