Surface Charges in a ZnO ‐  B 2 O 3 ‐ SiO2 Glass/Silicon System

Misawa, Yutaka; Hachino, H.; Hara, Shinichi; Hanazono, M.

doi:10.1149/1.2115578

Cited by 9 publications

(8 citation statements)

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“…The surface charge density of glass B was larger in the negative direc-'o 4: tion than that of glass A, for which the B~O3 content was smaller. This result is in agreement with previous work (1).…”

Section: Surface Charge Density--the Relationships Betweensupporting

confidence: 94%

“…However, the positive surface charges accumulate n-type silicon surface and are higher than the surface fields of the p+-n junction. We have already reported that surface charge density of ZnO-B~O3-SiO~ glass/Si system could be controlled by changing glass composition (1). However, it is desirable that glasses for surface passivation have the following properties, except for surface charge density: (i) a thermal expansion coefficient nearly equal to that of silicon, (ii) low glass firing temperature, and (iii) no harmful effects on the p-n junction.…”

mentioning

confidence: 99%

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Properties of ZnO ‐ B 2 O 3 ‐ SiO2 Glasses for Surface Passivation

Misawa

1984

J. Electrochem. Soc.

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Two normalZnO‐B2O3‐SiO2 glasses, glass A ( normalZnO:65.4 , B2O3:24.5 , SiO2:10.1 weight percent [w/o]) and glass B ( normalZnO:63 , B2O3:29 , SiO2:8 normalw/normalo ), were prepared for the purpose of passivating high voltage silicon devices. Their physical and electrical properties were compared using DTA characteristics, SEM observations, x‐ray diffraction patterns, thermal expansion coefficients, and surface charge densities, as a function of firing temperature. Reverse characteristics of semiconductor devices passivated with these glasses were also investigated. Differences in the variation of properties with firing temperature between the two glasses were found to originate mainly from differences in the variation of crystal morphology in the glasses as a function of firing temperature.

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Section: Surface Charge Density--the Relationships Betweensupporting

confidence: 94%

mentioning

confidence: 99%

Properties of ZnO ‐ B 2 O 3 ‐ SiO2 Glasses for Surface Passivation

Misawa

1984

J. Electrochem. Soc.

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“…From the definition of s (Eq. [6]), its values are 320 cm/s for the glass passivation, and 38 cm/s for SiO passivation. Although the latter system has a smaller s value, an anomalous current increase is observed with increase in positive gate voltage.…”

Section: Ii~ = I~~u + Ij~vi (Xlm~0 [3]mentioning

confidence: 96%

Investigation of Leakage Currents in a Zinc Borosilicate Glass Passivated p‐n Junction Using a Gate‐Controlled Diode

Murakami

Misawa

Momma

1985

J. Electrochem. Soc.

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A new type of gate‐controlled diode to investigate the leakage currents of a thick zinc‐borosilicate glass passivated p+‐n junction is described. Using this diode, temperature dependencies of surface and bulk components of the leakage current were measured at different values of the reverse voltage. It was revealed that the surface generation current component cannot be ignored, as compared with bulk current component, even at temperatures above 100°C. The surface recombination velocity at room temperature in glass/silicon system calculated from surface generation current component exhibited a larger value of 300–400 cm/s than did the SiO2/normalsilicon system, and it tended to decrease with decreases in reverse voltage or with increases in junction temperature.

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“…The solder glasses that crystallize in the ZnO-B O -SiO -MgO system are used in the passivation of semiconductor power devices and also the seals for metal leads with a low thermal expansion coefficient, such as Mo, kovar, and invar [1,2]. For passivation purposes the glass powder of ZnO-B O -SiO is deposited, using one of several methods, onto the surface of devices such as transistors, diodes, and thyristors, as a 10-20 m thick film.…”

Section: Introductionmentioning

confidence: 99%

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Kim

Cheon

1997

Journal of Materials Science

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The evolution of crystallization and porosity changes with firing temperature were studied in ZnO-B 2 O 3 -SiO 2 -MgO glasses. Those glasses presintered at 610 °C to a low porosity were crystallized in the temperature range of 690-870 °C. The glasses were crystallized by a surface crystallization mechanism. The porosity increased with the crystallization temperature. In the temperature range of 710-790 °C, several crystalline phases, such as 3ZnO, and another form of zinc silicate (2ZnO-SiO 2 ), produced at relatively low temperatures, were produced, while above 800 °C only the 2ZnO-SiO 2 phase co-existed with a glass phase. Only an observed density difference between the glass and the crystallized glass cannot be attributed to the void formation during the crystallization reaction. Due to the crystallization the composition of the remaining glass around the crystalline phases is expected to change. The depletion of a certain component in the remaining glass, probably the SiO 2 due to the production of the 2ZnO-SiO 2 phase, might result in the increase in the vapour pressure of the remaining glass and lead to the observed increase in porosity. Below 800 °C, at which temperature the crystallization rate is fast and only a small amount of the glass phase remained, the porosity remained constant after the completion of the crystallization. Contrarily at 860 °C the porosity continuously increased with firing time.

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Surface Charges in a ZnO ‐ B 2 O 3 ‐ SiO2 Glass/Silicon System

Cited by 9 publications

References 1 publication

Properties of ZnO ‐ B 2 O 3 ‐ SiO2 Glasses for Surface Passivation

Properties of ZnO ‐ B 2 O 3 ‐ SiO2 Glasses for Surface Passivation

Investigation of Leakage Currents in a Zinc Borosilicate Glass Passivated p‐n Junction Using a Gate‐Controlled Diode

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