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normalZnO‐B2O3‐SiO2 glasses of different compositions were prepared and the surface charges in glass/silicon systems in which these glasses were used, were studied by measuring the capacitance‐voltage curves of metal‐glass‐silicon capacitors. The effects of glass film thickness, glass composition, and conductivity (n‐and p‐types) of silicon substrates on surface charges in glass/silicon systems were investigated. The surface charge density of n‐type silicon changed in the negative direction with increasing glass film thickness and became constant with a thickness of more than 20 μm. The more negative the glass charge, the lower was its surface‐state density. The surface‐charge density of glass coated n‐type and p‐type silicon substrates were found to be linearly related. The surface charge density of mixed glasses with different surface charge density was also investigated.

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