Surface chemical structure and doping characteristics of boron-doped Si nanowires fabricated by plasma doping

Oh, Seung Hoon; Won, Jin Hyoung; Bae, Jung Min; Kang, Yu; Ahn, Jae Pyung; Kang, Hang Won; Chae, Jimin; Suh, Dong Chan; Song, Woo-Bin; Kim, Sun Jung; Cho, Mann Ho

doi:10.1016/j.apsusc.2017.05.015

Cited by 11 publications

(11 citation statements)

References 25 publications

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“…The plasma doping process was used for Si NSs doping. This plasma doping process has some advantages to nanomaterials such as lower surface damage and higher dose rate compared with ion implantation. , In this regard, the plasma doping process is widely employed for nanowires and Fin field effect transistors (FETs) technology . PH 3 and BF 3 plasma were used for n - and p -type doping, respectively, of the Si NSs.…”

Section: Experimental Detailsmentioning

confidence: 99%

Plasma-Doped Si Nanosheets for Transistor and p–n Junction Application

Lee

Kwon

Seo

et al. 2019

ACS Appl. Mater. Interfaces

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Since the discovery of graphene, layered transition metal dichalcogenides (TMDs) have been considered promising materials for applications in various fields because of their fascinating structural features and physical properties. Doping in semiconducting TMDs is essential for their practical application. In this regard, two-dimensional (2D) Si materials have emerged as a key component of 2D electronic, optics, sensing, and spintronic devices because of their complementary metal–oxide–semiconductor (CMOS) compatibility, high-quality oxide formation, moderated bandgap, and well-established doping techniques. Here, we report the tuning of the electronic properties of Si nanosheets (NSs) using a plasma-doping technique. Using this doping process, we fabricated p–n homojunction diodes and transistors with Si NSs. The estimated high ON/OFF ratio of ∼106 and field-effect hole mobility of 329 cm2 V–1 s–1 suggest a high crystal quality of the Si NSs. We also demonstrate vertically stacked heterostructured p–n junction diodes with MoS2, which exhibit rectifying properties and excellent light response.

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Section: Experimental Detailsmentioning

confidence: 99%

Plasma-Doped Si Nanosheets for Transistor and p–n Junction Application

Lee

Kwon

Seo

et al. 2019

ACS Appl. Mater. Interfaces

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“…These localized surface plasmon resonance (LSPR) changes are consistent with the increase in doping, correlating with the decrease in the oxide. This observation can be due to the high-temperature ionization process (2 MHz) ionizing the metal species, supporting the diffusion of B into Si and thereby allowing the substitution of B into the Si lattice, generating holes …”

Section: Resultsmentioning

confidence: 93%

“…For the sensor produced at a high ionization rate (HDMS), the Si 2p spectra show deconvolution peaks at 97.78, 102.7, and 103.2 eV (Figure d). These peaks are attributed to the Si–Si bond, the Si–B bond, and SiO 2 , respectively. , The Si–B peak not observed in the bulk substrate (Figure d) clearly illustrates that B reacts with Si in the HDMS; in other words, it is an indication of substitution of Si atoms with B . When decreasing the ionization rate, the deconvolution peak corresponding to Si–Si increases and Si–B decreases or disappears further in the MDMS and PDMS, respectively (Figure S2a).…”

Section: Resultsmentioning

confidence: 96%

Predicting Metastasis from Cues of Metastatic Cancer Stem-like Cells-3D-Ultrasensitive Metasensor at a Single-Cell Level

2021

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Metastasis is the primary reason for treatment failure and cancer-related deaths. Hence forecasting the disease in its primary state can advance the prognosis. However, existing techniques fail to reveal the tumor heterogeneity or its evolutionary cascades; hence they are not feasible to predict the onset of metastatic cancer. The key to metastasis originates from the primary tumor cells, evolving by inheriting multistep sequential cue signals. We have identified this specific population, termed metastatic cancer stem-like cells (MCSCs), to foresee cancer’s ability to metastasize. An invasive property renders MCSCs nonadherent, summoning a powerful technique to forecast metastasis. Thus, we have generated an ultrasensitive 3D-metasensor to efficiently capture and investigate MCSCs and magnify the vital premetastatic signals from a single cell. We developed 3D-metasensor by an ultrafast laser ionization technique, consisting of self-assembled three-dimensionally organized nanoprobes incorporated with dopant functionalities. This distinct methodology establishes attachment with nonadherent MCSCs, elevates Raman activity, and enables probing of consequent signals (metabolic, proliferation, and metastatic) specifically altered in MCSCs. Extensive analysis using prediction toolsthe area under the curve (AUC) and principal component analysis (PCA)revealed high sensitivity (100%) and specificity (80%) to differentiate the MCSCs from other populations. Further, investigation reveals that the cue signal level from MCSCs of primary cancer is analogous to MCSCs from higher-level tumors, disclosing the relative dependence to estimate the primary tumor’s capacity to metastasize. Multiple spectrum evaluation using the metasensor pinpoint the dynamic cues in MCSCs predict the onset of metastasis; thus, exploring these metastasis hallmarks can enhance prognosis and revolutionize therapy strategies.

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“…The CAS-CI and SE calculation are performed with a cc-pVTZ basis set for both the systems. The ground state electronic configuration of the BF is given as, 1a 2 1 , 2a 4 , 5σ 2 in C ∞v symmetry), while the electronic ground state configuration of BF 2 in its equilibrium geometry is given as 1b…”

Section: The R-matrix Methodsmentioning

confidence: 99%

“…However, to the best of our knowledge there has been little experimental or theoretical investigation on electron scattering from these radicals. BF 3 plasmas generated from arc, pulsed or RF/ECR discharge are used as a boron source, which in turn is widely used as a p-type dopant in the ion implantation for the semiconductor industry [1][2][3]. The halogen-containing gaseous BF 3 is important for a variety of plasma technologies and finds applications in the field of material processing, plasma-assisted fabrication of large integrated circuits and semiconductor fabrication [4].…”

Section: Introductionmentioning

confidence: 99%

Electron scattering studies of BF and BF₂

Gupta¹,

Choi²,

Song³

et al. 2020

J. Phys. B: At. Mol. Opt. Phys.

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The present article reports calculated elastic, differential, momentum transfer and excitation cross section for electron scattering from BF and BF 2 radicals using the ab-initio R-matrix method. The calculations are performed with complete active space -configuration interaction and static exchange models for both targets to yield scattering cross sections and resonance parameters. Elastic and momentum transfer cross sections are also calculated using the spherical complex optical potential method to cover a wide energy range. The total ionization cross section is also reported from ionization threshold to 5 keV. The calculated cross sections for these neutral species are important for BF 3 plasma and are reported for the first time to the best of our knowledge except ionization.

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Surface chemical structure and doping characteristics of boron-doped Si nanowires fabricated by plasma doping

Cited by 11 publications

References 25 publications

Plasma-Doped Si Nanosheets for Transistor and p–n Junction Application

Plasma-Doped Si Nanosheets for Transistor and p–n Junction Application

Predicting Metastasis from Cues of Metastatic Cancer Stem-like Cells-3D-Ultrasensitive Metasensor at a Single-Cell Level

Electron scattering studies of BF and BF₂

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Surface chemical structure and doping characteristics of boron-doped Si nanowires fabricated by plasma doping

Cited by 11 publications

References 25 publications

Plasma-Doped Si Nanosheets for Transistor and p–n Junction Application

Plasma-Doped Si Nanosheets for Transistor and p–n Junction Application

Predicting Metastasis from Cues of Metastatic Cancer Stem-like Cells-3D-Ultrasensitive Metasensor at a Single-Cell Level

Electron scattering studies of BF and BF2

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Electron scattering studies of BF and BF₂