Surface composition of (100)InP substrates bombarded by low energy Ar+ ions, studied by AES and EPES

Gruzza, B.; Achard, B.; Pariset, C.

doi:10.1016/0039-6028(85)90896-9

Cited by 48 publications

(13 citation statements)

References 11 publications

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“…1 changed in comparison with the one of cleaned InP [11]. The effect of Ar + ions on InP led to appearance of peaks located at 8.6 eV and 11.6 eV, interpreted as due to surface and bulk plasmons of In metal; this is in agreement with the EELS spectrum (e) of pure In metal taken for comparison [12][13][14][15][16][17][18]. The argon ions bombardment on InP led to breaking of the chemical bonds In-P.…”

Section: Aes and Eels Of Inpsupporting

confidence: 69%

Investigation by EELS and TRIM simulation method of the interaction of Ar+ and N+ ions with the InP compound

Berrouachedi

Bouslama

Abdellaoui

et al. 2009

Applied Surface Science

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Section: Aes and Eels Of Inpsupporting

confidence: 69%

Investigation by EELS and TRIM simulation method of the interaction of Ar+ and N+ ions with the InP compound

Berrouachedi

Bouslama

Abdellaoui

et al. 2009

Applied Surface Science

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“…Previous results 12 have shown that metallic indium is present on the surface in an aggregate form. It was found that the coverage by the crystallites was 25% and the height was equivalent to four monolayers.…”

Section: Discussionmentioning

confidence: 96%

Study of InP(100) surface nitridation by x‐ray photoelectron spectroscopy

Bideux

Ould-Metidji

Gruzza

et al. 2002

Surface & Interface Analysis

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Ion beam nitridation of indium phosphide (100) substrates was studied using x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). Argon ion bombardment of the InP(100) surface removes the native oxides and induces the formation of three-dimensional indium clusters. After cleaning, the samples were nitrided in an ultrahigh vacuum chamber using a home-made radiofrequency plasma source (13.56 MHz) that allows nitridation at low pressures (10 −4 Pa). We have studied the influence of temperature on the nitridation mechanisms. For low temperature (T < 200• C), no variation of the metallic indium droplets was observed; for high temperature (T > 270 • C), the first layers of the substrate were damaged. The optimal temperature for the nitridation of InP(100) was found to be 250 • C.

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“…This ion bombardment cleaning is a key step in the nitridation process since it creates at the surface metallic indium droplets in well-controlled quantities (mean coverage : 25%, mean height: 4 atomic monolayers) [7,8].…”

Section: Methodsmentioning

confidence: 99%

Nitridation of InP(100) surface studied by synchrotron radiation

et al. 2005

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Abstract:The nitridation of InP(100) surfaces has been studied using synchrotron radiation photoemission. The samples were chemically cleaned and then ion bombarded, which cleaned the surface and also induced the formation of metallic indium droplets. The nitridation with a Glow Discharge Cell (GDS) produced indium nitride by reaction with these indium clusters. We used the In 4d and P 2p core levels to monitor the chemical state of the surface and the coverage of the species present. We observed the creation of In-N and P-N bonds while the In-In metallic bonds decrease which confirm the reaction between indium clusters and nitrogen species. A theoretical model based on stacked layers allows to assert that almost two monolayers of indium nitride are produced. The effect of annealing on the nitridated layers at 450°C has been also analysed. It appears that this system is stable until this temperature, well above the congruent evaporation temperature (370°C) of clean InP(100) : no increase of metallic indium bonds due to decomposition of the substrate is detected as shown in previous works [16] studying the InP(100) surfaces I.

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Surface composition of (100)InP substrates bombarded by low energy Ar+ ions, studied by AES and EPES

Cited by 48 publications

References 11 publications

Investigation by EELS and TRIM simulation method of the interaction of Ar+ and N+ ions with the InP compound

Investigation by EELS and TRIM simulation method of the interaction of Ar+ and N+ ions with the InP compound

Study of InP(100) surface nitridation by x‐ray photoelectron spectroscopy

Nitridation of InP(100) surface studied by synchrotron radiation

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