Surface corrosion inhibition mechanism of sarcosine as a green novel inhibitor on a novel barrier layer material of cobalt in copper film CMP for GLSI

Zhang, Yinchan; Niu, Xinhuan; Zhou, Jiakai; Wang, Jianchao; Yang, Chun‐Chun; Hou, Ziyang; Zhu, Yebo; Huang, Li

doi:10.1016/j.mssp.2021.106402

Cited by 34 publications

(9 citation statements)

References 45 publications

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“…Also, the different degree of blue shift in (b) and (c) indicates the appearance of new complexes in the solution. 31 The appearance of the solution is also consistent with the absorbance curve. The solution is light blue when only Cu(SO) 4 is present in the solution.…”

Section: Resultssupporting

confidence: 74%

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Surface Corrosion Inhibition Effect and Action Mechanism Analysis of 5-Methyl-Benzotriazole on Cobalt-Based Copper Film Chemical Mechanical Polishing for GLSI

Yan¹,

Niu²,

Luo³

et al. 2023

ECS J. Solid State Sci. Technol.

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With IC technology nodes >20 nm, chemical mechanical polishing (CMP) of Co-based Cu interconnection has changed to one-step polishing, which requires a rapid removal rate (RR) of Cu while controlling the height differences of Cu surface. Co as the barrier material also requires a lower RR to ensure a high Cu/Co RR selection ratio. Choosing the appropriate inhibitor in the slurry is extremely important. TTA was thoroughly examined in this study for its ability to prevent corrosion on Cu film. The results showed that TTA can effectively inhibit the removal of Cu under both dynamic and static conditions, which was confirmed by scanning electron microscopy and atomic force microscopy. TTA's corrosion inhibition mechanism was further revealed by electrochemical, quantum chemical calculation, UV-Visible, and X-ray photoelectron spectroscopy tests. It was found that TTA can inhibit corrosion of Cu by physical and chemical adsorption on the Cu surface. At the same time, it was also found TTA can inhibit corrosion of Co by forming Co-TTA and promoting the conversion of Co(OH)2 to Co3O4, and a Cu/Co removal rate selection ratio of 104 was obtained, which provides a suitable corrosion inhibitor for the polishing of Co-based Cu interconnection CMP and has broad application prospects.

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Section: Resultssupporting

confidence: 74%

“…11. 31 n is a constant, K is the adsorption equilibrium constant, and C is the concentration of TTA. Where C solvent represents the molarity of water (55.5 mol l −1 ).…”

Section: Resultsmentioning

confidence: 99%

Surface Corrosion Inhibition Effect and Action Mechanism Analysis of 5-Methyl-Benzotriazole on Cobalt-Based Copper Film Chemical Mechanical Polishing for GLSI

Yan¹,

Niu²,

Luo³

et al. 2023

ECS J. Solid State Sci. Technol.

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“…After the addition of both glycine and TTA to the base solution, the maximum absorbance is measured at 648 nm, which inferred that a mixed Cu-glycine and Cu-TTA complex was generated. Also, the different degree of blue shift in (b) and (c) indicates the appearance of new complexes in the solution [30]. The appearance of the solution is also consistent with the absorbance curve.…”

Section: Absorption Behavior Of Tta On the Cu Surfacesupporting

confidence: 76%

“…where Ɵ represents the surface coverage, which can be calculated by Eq. ( 11) [30]. K is the adsorption equilibrium constant, and C is the concentration of TTA.…”

Section: Absorption Behavior Of Tta On the Cu Surfacementioning

confidence: 99%

Surface corrosion inhibition effect and action mechanism analysis of 5-methyl-benzotriazole on cobalt-based copper film chemical mechanical polishing for GLSI

Yan

Niu

Luo

et al. 2022

Preprint

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With integrated circuit (IC) technology nodes below 20 nm, the chemical mechanical polishing (CMP) of cobalt (Co)-based copper (Cu) interconnection has been gradually changed to one-step polishing, which requires rapid removal rate (RR) of Cu while controlling the height differences of concave and convex areas on the Cu surface, and finally achieving global planarization. Co as the barrier material is also required a lower RR to ensure a high Cu/Co removal rate selection ratio. Therefore, choosing the appropriate inhibitor in the slurry is extremely important. The corrosion inhibitor 5-methyl-benzotriazole (TTA) was thoroughly examined in this study for its ability to prevent corrosion on Cu film as well as its mode of action. The experimental results showed that TTA can effectively inhibit the removal of Cu under both dynamic and static conditions, which was also confirmed by scanning electron microscopy (SEM) and atomic force microscopy (AFM) tests. The corrosion inhibition effect and mechanism of TTA was further revealed by open circuit potential (OCP), polarization curve, adsorption isotherm, quantum chemical calculation, UV-Visible and X-ray photoelectron spectroscopy (XPS) tests. It was found that TTA can inhibit the corrosion of Cu by physical and chemical adsorption on the Cu surface, which is conductive to obtain excellent planarization properties. At the same time, it was also found TTA can also inhibit the corrosion of Co by forming Co-TTA and promoting the conversion of Co(OH)2 to Co3O4, and a Cu/Co removal rate selection ratio of 104 was obtained, which provides a suitable corrosion inhibitor for the polishing of Co-based Cu interconnection CMP and has a broad application prospect.

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“…The inhibitor is used to suppress wafer corrosion. The surfactant is used to improve the hydrophilicity of the surface, thereby facilitating the removal of particles. − For instance, Alety et al discovered that a cleaning solution composed of 6.6 mM glycine and 15 mM 1,2,4-triazole was able to minimize the galvanic corrosion potential between the Cu and Co couple, while a large number of particles still remained on Co films. Moreover, it should be noted that azole derivatives can easily cause undesirable organic residues to form that can be left on wafer surfaces via chemisorption and are hard to remove.…”

Section: Introductionmentioning

confidence: 99%

Developing an Efficient Forward Design Method for Co Post-CMP Cleaning Formulations Based on Nanoparticle Removal Mechanisms

Zhang,

Wang,

Nan

et al. 2023

ACS Appl. Electron. Mater.

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Surface corrosion inhibition mechanism of sarcosine as a green novel inhibitor on a novel barrier layer material of cobalt in copper film CMP for GLSI

Cited by 34 publications

References 45 publications

Surface Corrosion Inhibition Effect and Action Mechanism Analysis of 5-Methyl-Benzotriazole on Cobalt-Based Copper Film Chemical Mechanical Polishing for GLSI

Surface Corrosion Inhibition Effect and Action Mechanism Analysis of 5-Methyl-Benzotriazole on Cobalt-Based Copper Film Chemical Mechanical Polishing for GLSI

Surface corrosion inhibition effect and action mechanism analysis of 5-methyl-benzotriazole on cobalt-based copper film chemical mechanical polishing for GLSI

Developing an Efficient Forward Design Method for Co Post-CMP Cleaning Formulations Based on Nanoparticle Removal Mechanisms

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