Surface cracking on Σ3, Σ9 CSL and random grain boundaries in helium implanted 316L austenitic stainless steel

Sakaguchi, Norihito; Ohguchi, Yuka; Shibayama, Tamaki; Watanabe, Seiichi; Kinoshita, Hironori

doi:10.1016/j.jnucmat.2012.08.019

Cited by 32 publications

(16 citation statements)

References 31 publications

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“…From TEM and SEM images, the cracks have already actually initiated while the recrystallization process has not be completely done, for example in the irradiated SiC annealed for 2 h at 900 °C. According to other relevant studies [ 22 , 23 , 24 ] and our current research results, the crack propagation should be caused by the tensile stress produced by the annealing-induced recrystallization. A probabilistic crack model with a power law was defined and developed by P. Rajeev and Tesfamariam [ 32 ] as shown in the equation

where C W is the crack width; ∆ T is a temperature difference between the initial temperature and annealing temperature; a and b are fitting coefficients according to the experiment data.…”

Section: Resultssupporting

confidence: 61%

“…Surface cracking is one of these features, which has a significant influence on the properties of SiC [ 21 ]. In fact, surface cracks can be generated on the surface of lots of ion-irradiated solid materials after annealing process [ 22 , 23 , 24 ]. The main reason for the formation of surface cracks should be attributed to the internal excessive stress including thermal stress [ 24 , 25 ], fatigue stress [ 26 , 27 ], and tensile stress [ 28 , 29 ].…”

Section: Introductionmentioning

confidence: 99%

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Recrystallization-Induced Surface Cracks of Carbon Ions Irradiated 6H-SiC after Annealing

Ran

Zhou

et al. 2017

Materials

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Single crystal 6H-SiC wafers with 4° off-axis [0001] orientation were irradiated with carbon ions and then annealed at 900 °C for different time periods. The microstructure and surface morphology of these samples were investigated by grazing incidence X-ray diffraction (GIXRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Ion irradiation induced SiC amorphization, but the surface was smooth and did not have special structures. During the annealing process, the amorphous SiC was recrystallized to form columnar crystals that had a large amount of twin structures. The longer the annealing time was, the greater the amount of recrystallized SiC would be. The recrystallization volume fraction was accorded with the law of the Johnson–Mehl–Avrami equation. The surface morphology consisted of tiny pieces with an average width of approximately 30 nm in the annealed SiC. The volume shrinkage of irradiated SiC layer and the anisotropy of newly born crystals during annealing process produced internal stress and then induced not only a large number of dislocation walls in the non-irradiated layer but also the initiation and propagation of the cracks. The direction of dislocation walls was perpendicular to the growth direction of the columnar crystal. The longer the annealing time was, the larger the length and width of the formed crack would be. A quantitative model of the crack growth was provided to calculate the length and width of the cracks at a given annealing time.

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where C W is the crack width; ∆ T is a temperature difference between the initial temperature and annealing temperature; a and b are fitting coefficients according to the experiment data.…”

Section: Resultssupporting

confidence: 61%

Section: Introductionmentioning

confidence: 99%

Recrystallization-Induced Surface Cracks of Carbon Ions Irradiated 6H-SiC after Annealing

Ran

Zhou

et al. 2017

Materials

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“…Sakaguchi et al studied that CSL boundaries exhibited high resistance to the crack propagation, and illustrated a relationship between the boundary structures and grain boundary energies that were directly connected to the coincidence site lattice model. Owing to simpler and smaller structural units, the low‐∑CSL boundaries featured as low excess grain boundary energy and strong bonding force have the attribute of reaction to the cleavage crack propagating along grain boundaries, as well as control intergranular brittleness and change intergranular fracture into transgranular fracture.…”

Section: Discussionmentioning

confidence: 99%

Effects of Coincident Site Lattice Grain Boundaries and Ordered Structures on Mechanical Properties of High Silicon Steel

Cai

Huang

2018

steel research int.

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The coincident site lattice (CSL) grain boundaries and ordered structures of high silicon steel are investigated through different warm rolling reductions. The results reveal that the plastic deformation ability of Fe-6.9 wt%Si warmrolled sheet mainly depends on the total content of special P CSL boundaries and antiphase domain of ordered structures. With the increase of rolling reductions from 65% to 86%, the superdislocation glide behavior of warmrolled sheets is changed into the single dislocation glide, as well as the fragmentation behavior of ordered structures at different rolling reductions causes a decrease in the sizes of antiphase domains. While the sharp and homogeneous distribution of γ-orientation texture is beneficial to obtain a large fraction of P CSL boundaries that have great contribute to high resistance to the initiation and propagation of cracks. In the three-point bending tests, the values of fracture deflection improves from 3.5 mm to 12.1 mm, and the mixed fracture mode of inter-and trans-granular is transformed into quasi-cleavage fracture mode, which indicates the high rolling reduction is conducive to the improvement of plastic deformation ability.

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“…Many experiments have been carried out in order to improve the helium resistance ability of materials [3] [4] [5]. Fabritsiev et al [3] studied the effect of the grain size and high rate of helium accumulation on radiation resistance of pure copper for fusion equipment applications.…”

Section: Introductionmentioning

confidence: 99%

Study on Helium Bubble Coalescence in Titanium with Dislocations

Zhang¹,

Xue²,

Li³

et al. 2021

WJNST

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Dislocation and grain boundary have great influence on helium behavior in materials. In this paper, the helium bubble coalescence in titanium with dislocations was simulated using molecular dynamics method. The results show that, when the second helium bubble nucleates near the slip plane, it grows toward the first helium bubble which lies at the dislocation core till they coalesce with each other. However, it is not easy for the coalescence to occur if the two helium bubbles lie in different atomic layers in (001) plane. If the second helium bubble is nucleated on the side of the slip plane with full atomic layers, the second helium bubble growth could lead to the movement of the first helium bubble toward the other sides of the slip plane. The growth rate and direction of the second helium bubble are closely related to the pressure around it.

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Surface cracking on Σ3, Σ9 CSL and random grain boundaries in helium implanted 316L austenitic stainless steel

Cited by 32 publications

References 31 publications

Recrystallization-Induced Surface Cracks of Carbon Ions Irradiated 6H-SiC after Annealing

Recrystallization-Induced Surface Cracks of Carbon Ions Irradiated 6H-SiC after Annealing

Effects of Coincident Site Lattice Grain Boundaries and Ordered Structures on Mechanical Properties of High Silicon Steel

Study on Helium Bubble Coalescence in Titanium with Dislocations

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