Surface effect and phase transitions in ferroelectric thin films

Park, Y.

doi:10.1016/s0038-1098(99)00287-2

Cited by 11 publications

(2 citation statements)

References 6 publications

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“…Grace to their importance in the fields of microelectronics and optoelectronics the ferroelectrics systems play a precious role in the new technology. Several authors already worked experimentally [1][2][3][4][5] and theoretically [6][7][8][9][10][11][12][13][14][15] in the ferroelectrics fields. To model ferroelectrics phenomenon the transverse Ising model (TIM) within the effective field theory (EFT) are well used by the authors [16].…”

Section: Introductionmentioning

confidence: 99%

How to Model an Ising Ferroelectric System: Case of the Investigation of the Dielectrics Properties of a Nano-Octahedral Ferroelectric System

Diouf¹

2017

COM

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The effective field theory within a probability distribution technique that accounts for the self-spin correlation functions is used to investigate the dielectrics properties of a nano-octahedral system described by the spin S=1/2 Ising model. The thermal behavior of the polarizations, susceptibilities, and the hysteresis loops are examined in details and even the details to model a ferroelectric system.

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Section: Introductionmentioning

confidence: 99%

How to Model an Ising Ferroelectric System: Case of the Investigation of the Dielectrics Properties of a Nano-Octahedral Ferroelectric System

Diouf¹

2017

COM

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“…Furthermore, structural, dielectric properties, residual stress, crystallographic orientation and solution aging of PZT were all investigated. [2−4] Theoretically, utilizing a phenomenological approach in Landau-type theory, Park [5] studied surface effects and phase transitions properties in ferroelectric thin films. In addition, TIM is more widely used to study the properties of ferroelectric thin film.…”

Section: Introductionmentioning

confidence: 99%

Study of Defect-Layers Effect in Ferroelectric Thin Film with Transverse Ising Model

Wang¹,

Teng²,

Kwok³

et al. 2011

Commun. Theor. Phys.

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By taking into account the two-spin interaction in the transverse Ising model (TIM), the influence of the defect layers (including JB and ΩB) on the polarization and Curie temperature are calculated numerically, within the framework of the decoupling approximation under Green's function. The numerical results show that the polarization and Curie temperature will both become large sensitively due to the large values of JB and the small value of ΩB of the defect layers. Meanwhile, the dependence of the crossover values of the exchange interaction JA, the transverse field ΩA of the bulk material on the exchange interaction JB and the transverse field ΩB of the defect layers are shown in 3-Dimensional (3-D) figures for the first time. Moreover, the transition features of the ferroelectric thin film with defect layers are presented.

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