Surface emitting 1.5 µm multi-quantum well LED on epitaxial lateral overgrowth InP/Si

Omanakuttan, Giriprasanth; Sun, Yan-Ting; Hedlund, Carl Reuterskiöld; Junesand, Carl; Schatz, Richard; Lourdudoss, Sebastian; Pillard, V.; Lelarge, F.; Browne, Jack; Justice, John; Corbett, Brian

doi:10.1364/ome.395249

Cited by 9 publications

(4 citation statements)

References 31 publications

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“…While this is difficult to fully rule out, it has been previously observed during PL mapping of ELOG samples that the PL spectra exhibit characteristic undulations when there is significant contribution to the signal from the mask reflection, which were not seen during the measurements in this work. [42] Another important observation is the reduction of the PL peak FWHM in the masked region compared to the seed region (Figure 5e,f ), which was also seen for GaAsP ELOG on GaAs SAG samples A-C (Figure 3b,e,h). This illustrates how, despite the circular geometry with simultaneous growth on many different high-index facets, there does not appear to be any significant phase separation or local compositional spreading in the laterally grown GaAsP.…”

Section: Gaasp Elog On 2 00 Gaas/si Templatessupporting

confidence: 57%

Epitaxial Lateral Overgrowth of GaAsP for III‐V/Si‐Based Photovoltaics

Strömberg

Balaji

Srinivasan

et al. 2023

Physica Status Solidi (a)

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GaAsP/Si with high crystalline quality fabricated by cost-effective heteroepitaxial technology is a promising pathway for realizing low-cost Si-based tandem solar cell with efficiency higher than 30%. Herein, hydride vapor-phase epitaxy is used to perform selective area growth of GaAsP with high lateral coverage, referred to as epitaxial lateral overgrowth (ELOG). The ELOG is performed on GaAs-based substrates as a prestudy, followed by GaAs/Si and GaAsP/Si seed wafers employing chemical mechanical polishing to fabricate full 2 00 GaAsP/Si templates. These are subsequently used to grow and process GaAsP/Si pn-junction structures for electrical characterization. The ELOG GaAsP is studied by spatially resolved photoluminescence (PL) mapping and high-resolution X-ray diffraction measurements. PL analysis of the GaAsP/GaAs ELOG samples reveals an enhanced P-incorporation during lateral growth of GaAsP. This is also observed for the GaAsP/Si ELOG templates along with evidence of improved material quality, clearly distinguishing the laterally grown GaAsP from the planar growth directly above the Si substrate. Leakage pathways causing reduced electrical performance of the ELOG GaAsP/Si pn-junction structures are identified.

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Section: Gaasp Elog On 2 00 Gaas/si Templatessupporting

confidence: 57%

Epitaxial Lateral Overgrowth of GaAsP for III‐V/Si‐Based Photovoltaics

Strömberg

Balaji

Srinivasan

et al. 2023

Physica Status Solidi (a)

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“…Therefore, we expect the Stokes peak broadening to be the most appropriate modality for this temperature study in particular as the anti-stokes/Stokes ratio approaches 1 for the high temperatures expected and does therefore not provide as accurate temperature extractions as for lower temperature ranges. We use the Raman peak of InP's longitudinal optical (LO) mode, which is reported to be located around 340 to 350 cm −1 for InP bulk, 40 350 cm −1 for InP QWs on Si, 41 and 340 cm −1 for InP nanowires. 42 Figure 4a shows the Raman spectra of purely photonic nanocavities with various diameters from 300 nm to 2 μm (at 300 K without external heating with the heating stage) acquired when excited at 532 nm with a laser power of 2.31 mW.…”

Section: ■ Resultsmentioning

confidence: 99%

Thermal Simulation and Experimental Analysis of Optically Pumped InP-on-Si Micro- and Nanocavity Lasers

et al. 2022

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There is a general trend of downscaling laser cavities, but with high integration and energy densities of nanocavity lasers, significant thermal issues affect their operation. The complexity of geometrical parameters and the various materials involved hinder the extraction of clear design guidelines and operation strategies. Here, we present a systematic thermal analysis of InP-on-Si micro- and nanocavity lasers based on steady-state and transient thermal simulations and experimental analysis. In particular, we investigate the use of metal cavities for improving the thermal properties of InP-on-Si micro- and nanocavity lasers. Heating of lasers is studied by using Raman thermometry and the results agree well with simulation results, both revealing a temperature reduction of hundreds of kelvins for the metal-clad cavity. Transient simulations are carried out to improve our understanding of the dynamic temperature variation under pulsed and continuous wave pumping conditions. The results show that the presence of a metal cladding not only increases the overall efficiency in heat dissipation but also causes a much faster temperature response. Together with optical experimental results under pulsed pumping, we conclude that a pulse width of 10 ns and a repetition rate of 100 kHz is the optimal pumping condition for a 2 μm wide square cavity.

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“…To meet the demands of these applications, compact NIR-LEDs that can deliver higher power output at large injection currents are required. During the past few years, innovative approaches, such as multiple quantum wells (MQWs), distributed Bragg reflectors (DBRs), omnidirectional reflectors (ODRs) and current-spreading layers have been developed to improve the output power in NIR-LEDs [ 3 , 4 , 5 , 6 , 7 ].…”

Section: Introductionmentioning

confidence: 99%

Enhanced Light Output Power on Near-Infrared Light-Emitting Diodes with TITO/Ag Multilayer Reflector

Lee¹,

Jang

Kim³

et al. 2022

Micromachines

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A titanium–indium tin oxide (TITO) multilayer reflector was investigated to improve the light efficiency of high-power, near-infrared, light-emitting diodes (NIR-LEDs). The TITO/Ag was fabricated by combining a patterned TITO and an omnidirectional reflector (ODR). For fabricating a high-power NIR-LED, the wafer bond process required the TITO reflective structure, which has patterns filled by AlAu contact metal, bonded directly to the Ag reflector deposited on the silicon wafer. Among Ag-based single- and multilayer reflectors, the TITO/Ag showed the highest reflectance (R = 96%), which was favorable for wafer-bonded high-power NIR-LEDs. Therefore, the TITO/Ag reflector enabled the production of wafer-bonded NIR-LED chips that exhibit superior output performance (190 mW) compared with conventional cases using a single Ag reflector.

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Surface emitting 1.5 µm multi-quantum well LED on epitaxial lateral overgrowth InP/Si

Cited by 9 publications

References 31 publications

Epitaxial Lateral Overgrowth of GaAsP for III‐V/Si‐Based Photovoltaics

Epitaxial Lateral Overgrowth of GaAsP for III‐V/Si‐Based Photovoltaics

Thermal Simulation and Experimental Analysis of Optically Pumped InP-on-Si Micro- and Nanocavity Lasers

Enhanced Light Output Power on Near-Infrared Light-Emitting Diodes with TITO/Ag Multilayer Reflector

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