Surface-emitting laser diode with distributed Bragg reflector and buried heterostructure

Ogura, Mutsuo; Mukai, Seiji; Shimada, Makoto; Asaka, Tatsuya; Yamasaki, Y.; Seki, T.; Iwano, Hideaki

doi:10.1049/el:19900012

Cited by 15 publications

(1 citation statement)

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“…Careful etching techniques combined with special cleaning processes and/or avoiding atmospheric exposure are necessary. Three successfully demonstrated regrowth techniques to date are: etching followed by liquid phase epitaxy (LPE) utilizing melt-back cleaning [76], [77]; vacuum integrated dry etching and molecular beam epitaxy (MBE) [78], [79]; and dry etching followed by chemical pretreatments before metalorganic vapor phase epitaxy (MOVPE) [80].…”

Section: Regrown Structuresmentioning

confidence: 99%

Design, fabrication, and performance of infrared and visible vertical-cavity surface-emitting lasers

Chow

Choquette

Crawford

et al. 1997

IEEE J. Quantum Electron.

207

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Abstract-This paper discusses the issues involving the design and fabrication of vertical-cavity surface-emitting lasers (VCSEL's). A review of the basic experimental structures is given, with emphasis on recent developments in distributed Bragg reflectors, gain media, as well as current and optical confinement techniques. The paper describes present VCSEL performance, in particular, those involving selective oxidation and visible wavelength operation.

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Section: Regrown Structuresmentioning

confidence: 99%

Design, fabrication, and performance of infrared and visible vertical-cavity surface-emitting lasers

Chow

Choquette

Crawford

et al. 1997

IEEE J. Quantum Electron.

207

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Surface‐emitting semiconductor lasers and surface‐operating functional devices

Iga

1992

Electron Comm Jpn Pt II

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Surface‐emitting semiconductor lasers have attracted attention because of their applications in new fields of optoelectronics such as parallel processing, optical interconnections, etc. In these lasers, light is emitted perpendicularly to the semiconductor substrate which creates the possibility of two‐dimensional parallel integration. In this paper, the state of research on surfaceemitting semiconductor lasers is discussed first as are various structures of surface‐emitting semiconductor lasers with vertical, horizontal, and folded resonators. The formation of a buried structure or highly reflective configuration employed to achieve the low threshold operation of surface‐emitting semiconductor lasers with vertical cavities are focused upon and their oscillation characteristics of two‐dimensional array arrangements are introduced. Finally, the recent progress of surface‐emitting lasers and surface‐operating functional devices together with their future prospects are presented.

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On polarizability properties of bianisotropic spheres with noncomplete magnetoelectric dyadics

Sihvola¹

1994

Micro & Optical Tech Letters

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Surface-emitting laser diode with distributed Bragg reflector and buried heterostructure

Cited by 15 publications

References 0 publications

Design, fabrication, and performance of infrared and visible vertical-cavity surface-emitting lasers

Design, fabrication, and performance of infrared and visible vertical-cavity surface-emitting lasers

Surface‐emitting semiconductor lasers and surface‐operating functional devices

On polarizability properties of bianisotropic spheres with noncomplete magnetoelectric dyadics

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