2005
DOI: 10.1116/1.1978894
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Surface etching of YBCO films by xenon difluoride

Abstract: We have demonstrated that xenon difluoride (XeF2) etches thin films of YBa2Cu3O7−x, the superconducting form of yttrium–barium–copper–oxide (YBCO), during dry etch processing. Both c-axis and mixed a/c-axis YBCO films show evidence of such etching with a axis being more reactive. Profiles of YBCO films examined by ESCA show that the surfaces of both etched and unetched films are barium rich at the expense of yttrium. After XeF2 etching, fluorine was found to be present to a depth of at least 40 nm. Despite the… Show more

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“…This can be achieved by changing the incidence angle of IBE, changing the photoresist mask sidewall profile to deflect the energetic plasma collisions, and reducing the etch power. We will also evaluate gaseous Xenon difluoride (XeF 2 ) etching due to its strong selectivity and etch rate to silicon material [9].…”
Section: Discussionmentioning
confidence: 99%
“…This can be achieved by changing the incidence angle of IBE, changing the photoresist mask sidewall profile to deflect the energetic plasma collisions, and reducing the etch power. We will also evaluate gaseous Xenon difluoride (XeF 2 ) etching due to its strong selectivity and etch rate to silicon material [9].…”
Section: Discussionmentioning
confidence: 99%