Surface exfoliation analysis on single-crystal silicon under compressed plasma flow action

Abstract

Surface exfoliation was observed on single-crystal silicon surface under the action of compressed plasma flow (CPF). This phenomenon is mainly attributed to the strong transient thermal stress impact induced by CPF. To gain a better understanding of the mechanism, a micro scale model combined with thermal conduction and linear elastic fracture mechanics was built to analyze the thermal stress distribution after energy deposition. After computation with finite element method, J integral parameter was applied as the criterion for fracture initiation evaluation. It was demonstrated that the formation of surface exfoliation calls for specific material, crack depth, and CPF parameter. The results are potentially valuable for plasma/matter interaction understanding and CPF parameter optimization.

Defect engineering of silicon with ion pulses from laser acceleration

“…Exfoliation of silicon (100) following exposure to ~50 ion pulses from an electrostatic accelerator and from exposure to high flux low energy plasma flows have been reported earlier 31,46 . Here, we find local exfoliation from single ion pulses.…”

Collision Cascade in a Silicon-Based Device under Energetic Ar Ions Irradiation

“…During this period, the focus is on methods that either deal with the primary irradiation defects generation, or with such damage evolution that occurs due to irradiation [15,16]. Silicon surface can generate different morphology under irradiation, such as cleavage crack [17], nanocrystallite [18], crater [19], swelling [20], exfoliation [21], and so on. Our previous works show collision cascade generation and evolution in silicon under pulsed ion beam irradiation [22,23].…”