Surface exfoliation and defect structures in Si induced by 160keV He and 110keV H ion implantation

Wang, Zhuo; Liu, Changlong; Li, Tianyu; Zhang, Xiao Dong; Wen-run, LI; Li, Wenxia; Yuan, Bing; Wu, Pengyue; Li, Mengkai

doi:10.1016/j.nimb.2007.11.005

Cited by 3 publications

(1 citation statement)

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“…Such surface effects mainly result from the synergetic role of both He and H ions. In our earlier research, 16 we studied the surface damage of pure Si under the same implantation conditions, i.e., sequential implantation of 160 keV He at a dose of 5 9 10 16 /cm 2 and 110 keV H ions at a dose of 1 9 10 16 /cm 2 . During the subsequent annealing at a relatively wide temperature range (up to 800°C), serious surface exfoliation of Si was well observed above the annealing temperature of 500°C.…”

Section: Resultsmentioning

confidence: 99%

Two Layer Surface Exfoliation on Si3N4/Si by Sequential Implantation of He and H Ions

Wang

Liu

et al. 2009

Journal of Elec Materi

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n-Type Si(100) wafers with a thermally grown Si 3 N 4 layer ($170 nm) were sequentially implanted with 160 keV He ions at a dose of 5 9 10 16 cm À2 and 110 keV H ions at a dose of 1 9 10 16 cm À2 . Depending on the annealing temperature, surface exfoliations of two layers were observed by optical microscopy and atomic force microscopy. The first layer exfoliation was found to correspond to the top Si 3 N 4 layer, which was produced at lower annealing temperatures. The other was ascribed to the implanted Si layer, which was formed at higher temperatures. The possible exfoliation processes are tentatively discussed, and potential applications of such phenomena are also suggested.

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Section: Resultsmentioning

confidence: 99%