Surface-Functionalized Hafnia with Bespoke Ferroelectric Properties for Memory and Logic Applications

Revival of Ferroelectric Memories Based on Emerging Fluorite‐Structured Ferroelectrics

“…The E c /E bd ratio of fluorite-structured ferroelectrics is lower than those of PZT and SBT; therefore, solutions are required to enhance endurance, despite the endurance currently being more than sufficient for storage memory applications. Moreover, there is a trade-off between the endurance [183] Copyright 2021, IEEE. b) Reproduced with permission.…”

“…[ 181 ] Some textured ferroelectric fluorite‐structured oxide films have been achieved on Si, [ 46b,d,182 ] but they generally have thicknesses of <3 nm, which hinders suppression of the leakage current. Surface engineering of hafnia films, together with an appropriate annealing condition, [ 183 ] is also important to control preferred orientation in thin film hafnia ( Figure a). Moreover, as the crystallization temperature increases with decreasing film thickness, it is difficult to crystallize such ultrathin films.…”

“…b) An illustration of a sharp boundary between the o-and t-phase, which enables a low-barrier ferroelectric domain formation. a) Reproduced with permission [183]. Copyright 2021, IEEE.…”