Surface influence on the conductance DLTS spectra of GaAs MESFET's

Blight, S. R.; Wallis, R.H.; Thomas, H.

doi:10.1109/t-ed.1986.22693

Cited by 96 publications

(19 citation statements)

References 14 publications

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“…Moreover, it gives rise to a ''hole-like'' peak [4] in the I-DLTS spectrum of FAT-HEMTs. All of these findings consistently indicate that trap A is a surface trap.…”

Section: Resultsmentioning

confidence: 99%

Characterization and analysis of trap-related effects in AlGaN–GaN HEMTs

Faqir

Verzellesi

Fantini

et al. 2007

Microelectronics Reliability

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“…Moreover, it gives rise to a ''hole-like'' peak [4] in the I-DLTS spectrum of FAT-HEMTs. All of these findings consistently indicate that trap A is a surface trap.…”

Section: Resultsmentioning

confidence: 99%

Characterization and analysis of trap-related effects in AlGaN–GaN HEMTs

Faqir

Verzellesi

Fantini

et al. 2007

Microelectronics Reliability

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“…Negatively going DLTS signals or hole-like traps ͑if negative valleys appear͒ have been studied for GaAs metalsemiconductor field-effect transistors and AlGaAs/ GaAs HEMTs since 1986. [11][12][13] In these cases, there is good evidence that GaAs or AlGaAs surface states are the origin of the hole-like traps. That is, these states can trap injected electrons from the gate during the filling pulse, and produce a positive capacitance transient, 13 which simulates a hole trap.…”

mentioning

confidence: 99%

Traps in AlGaN∕GaN∕SiC heterostructures studied by deep level transient spectroscopy

Fang

Look

Kim

et al. 2005

Applied Physics Letters

107

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AlGaN ∕ GaN ∕ SiC Schottky barrier diodes (SBDs), with and without Si3N4 passivation, have been characterized by temperature-dependent current-voltage and capacitance-voltage measurements, and deep level transient spectroscopy (DLTS). A dominant trap A1, with activation energy of 1.0 eV and apparent capture cross section of 2×10−12cm2, has been observed in both unpassivated and passivated SBDs. Based on the well-known logarithmic dependence of DLTS peak height with filling pulse width for a line-defect related trap, A1, which is commonly observed in thin GaN layers grown by various techniques, is believed to be associated with threading dislocations. At high temperatures, the DLTS signal sometimes becomes negative, likely due to an artificial surface-state effect.

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“…This is consistent with Blight et al's works. 10 In their work, the height of the hole-like signal was proportional to the ratio of the ungated surface between gate and source/ Fig. 6.…”

Section: Discussionmentioning

confidence: 92%

“…6. 10 Due to the Fermi level pinning at the surface of Al x Ga 1Ϫx As, the depletion layer width is approximately constant from the source to the drain at the gate voltage of zero, as in Fig. 6͑a͒.…”

Section: Discussionmentioning

confidence: 97%

“…9 In DLTS measurements of FETs, anomalously large hole-like signals were frequently observed. [10][11][12][13] Blight et al 10 observed hole-like signals using conductance DLTS technique and attributed their origin to surface states between gate and source/drain electrodes. The fingerprint of the hole-like signal was provided by observing the temperature and filling pulse time dependence on the change of the peak height of the hole-like signal.…”

mentioning

confidence: 99%

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Surface states on n-type Al0.24Ga0.76As characterized by deep-level transient spectroscopy

Choi

Lee

2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inSurface states on n-type Al 0.24 Ga 0.76 As were studied using capacitance deep-level transient spectroscopy ͑DLTS͒. Two types of hole-like traps ͑labeled as H1 and H2 in this work͒ were observed in a Al 0.24 Ga 0.76 As/In 0.22 Ga 0.78 As pseudomorphic high-electron-mobility transistor with a multifinger gate. But, no hole-like traps were observed in the fat field-effect transistor ͑FATFET͒ having a negligible ratio of the ungated surface to the total area between the source and the drain. This provides evidence that the hole-like trap peaks in the DLTS spectra originated from surface states at the ungated Al 0.24 Ga 0.76 As regions exposed between gate and source/drain electrodes. The activation energies for both surface states were determined to be 0.50Ϯ0.03 and 0.81Ϯ0.01 eV. The comparison of activation energies of the two surface states with the Schottky barrier height 0.66Ϯ0.01 eV suggests that H1 and H2 are deeply related to the Fermi energy pinning levels at the Al 0.24 Ga 0.76 As surface.

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Surface influence on the conductance DLTS spectra of GaAs MESFET's

Cited by 96 publications

References 14 publications

Characterization and analysis of trap-related effects in AlGaN–GaN HEMTs

Characterization and analysis of trap-related effects in AlGaN–GaN HEMTs

Traps in AlGaN∕GaN∕SiC heterostructures studied by deep level transient spectroscopy

Surface states on n-type Al0.24Ga0.76As characterized by deep-level transient spectroscopy

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