Characterization and analysis of trap-related effects in AlGaN–GaN HEMTs

Faqir, Mustapha; Verzellesi, Giovanni; Fantini, Fausto; Danesin, F.; Rampazzo, F.; Meneghesso, G.; Zanoni, Enrico; Cavallini, A.; Castaldini, A.; Labat, Nathalie; Touboul, A.; Dua, C.

doi:10.1016/j.microrel.2007.07.005

Cited by 29 publications

(9 citation statements)

References 7 publications

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“…2, are quite interesting because the observed positive-going peaks indicate hole-like trap behavior. This observation is not unique as several others have observed similar phenomena (10)(11)(12)(13). The peaks shifted normally with temperature as shown in the Arrhenius plot in Fig.…”

Section: Resultssupporting

confidence: 67%

“…Under the gate, the defect concentrations are a fraction of the twodimensional electron gas concentration and therefore only cause a small shift in V T that has less impact on the HEMT RF performance than the defects in the access regions. 0.1x10 10 -4.4x10 10 ~3x10 10 12.3x10 10 7.5x10 10 3.9x10 10 GaN or AlGaN related GaN GaN * indicates activation energy of hole-like deep levels meaning the levels would be referenced to the valence band (EV + defect energy).…”

Section: Discussionmentioning

confidence: 99%

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Spatially-discriminating trap characterization methods for HEMTs and their application to RF-stressed AlGaN/GaN HEMTs

Arehart

Sasikumar

Via

et al. 2010

2010 International Electron Devices Meeting

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Section: Resultssupporting

confidence: 67%

Section: Discussionmentioning

confidence: 99%

Spatially-discriminating trap characterization methods for HEMTs and their application to RF-stressed AlGaN/GaN HEMTs

Arehart

Sasikumar

Via

et al. 2010

2010 International Electron Devices Meeting

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“…The D 1 trap is also related to defects and dislocations in the GaN material [24]. In [25], a trap with similar activation energy (0.18 eV) is found, and is suggested to be located at the surface. The Stepped-C device does not show any consistent shift in the dispersion peaks versus frequency and no activation energy could, therefore, be extracted.…”

Section: Output Conductance Dispersionmentioning

confidence: 85%

Dispersive Effects in Microwave AlGaN/AlN/GaN HEMTs With Carbon-Doped Buffer

Gustafsson

Chen

Bergsten

et al. 2015

IEEE Trans. Electron Devices

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Aluminium gallium nitride (AlGaN)/GaN high-electron mobility transistor performance is to a large extent affected by the buffer design, which, in this paper, is varied using different levels of carbon incorporation. Three epitaxial structures have been fabricated: 1) two with uniform carbon doping profile but different carbon concentration and 2) one with a stepped doping profile. The epitaxial structures have been grown on 4H-SiC using hot-wall metal-organic chemical vapor deposition with residual carbon doping. The leakage currents in OFF-state at 10 V drain voltage were in the same order of magnitude (10 −4 A/mm) for the high-doped and stepped-doped buffer. The high-doped material had a current collapse (CC) of 78.8% compared with 16.1% for the stepped-doped material under dynamic I-V conditions. The low-doped material had low CC (5.2%) but poor buffer isolation. Trap characterization revealed that the high-doped material had two trap levels at 0.15 and 0.59 eV, and the low-doped material had one trap level at 0.59 eV.Index Terms-Current collapse (CC), dispersion, gallium nitride (GaN), high-electron mobility transistor (HEMT), trap levels.

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“…Such midgap states in GaN-based devices have been characterized and analyzed by conductance method, 5,6,[16][17][18][19][20][21] Terman method, 22,23 photo-assisted C-V method, 24,25 and deep level transient spectroscopy. [26][27][28][29] Although the conductance method is widely used, there are difficulties in the analysis of deep interface states with long trapping time constants 30 in MIS devices based on wide-bandgap materials like GaN. 6,7,31 Also, the analysis results obtained from the conductance method is affected by the assumed value of the insulator capacitance.…”

Section: Introductionmentioning

confidence: 99%

Gate-control efficiency and interface state density evaluated from capacitance-frequency-temperature mapping for GaN-based metal-insulator-semiconductor devices

Shih

Kudo

Suzuki

2014

Journal of Applied Physics

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Articles you may be interested inModeling small-signal response of GaN-based metal-insulator-semiconductor high electron mobility transistor gate stack in spill-over regime: Effect of barrier resistance and interface states Interface trap characterization of atomic layer deposition Al2O3/GaN metal-insulator-semiconductor capacitors using optically and thermally based deep level spectroscopies Analysis of AlN/AlGaN/GaN metal-insulator-semiconductor structure by using capacitance-frequencytemperature mapping Appl. Phys. Lett. 101, 043501 (2012); 10.1063/1.4737876 Effects of interface states and temperature on the C -V behavior of metal/insulator/AlGaN/GaN heterostructure capacitorsWe present an analysis method for GaN-based metal-insulator-semiconductor (MIS) devices by using capacitance-frequency-temperature (C-f-T) mapping to evaluate the gate-control efficiency and the interface state density, both exhibiting correlations with the linear-region intrinsic transconductance. The effectiveness of the method was exemplified by application to AlN/AlGaN/GaN MIS devices to elucidate the properties of AlN-AlGaN interfaces depending on their formation processes. Using the C-f-T mapping, we extract the gate-bias-dependent activation energy with its derivative giving the gate-control efficiency, from which we evaluate the AlN-AlGaN interface state density through the Lehovec equivalent circuit in the DC limit. It is shown that the gatecontrol efficiency and the interface state density have correlations with the linear-region intrinsic transconductance, all depending on the interface formation processes. In addition, we give characterization of the AlN-AlGaN interfaces by using X-ray photoelectron spectroscopy, in relation with the results of the analysis. V C 2014 AIP Publishing LLC. [http://dx.

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Characterization and analysis of trap-related effects in AlGaN–GaN HEMTs

Cited by 29 publications

References 7 publications

Spatially-discriminating trap characterization methods for HEMTs and their application to RF-stressed AlGaN/GaN HEMTs

Spatially-discriminating trap characterization methods for HEMTs and their application to RF-stressed AlGaN/GaN HEMTs

Dispersive Effects in Microwave AlGaN/AlN/GaN HEMTs With Carbon-Doped Buffer

Gate-control efficiency and interface state density evaluated from capacitance-frequency-temperature mapping for GaN-based metal-insulator-semiconductor devices

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