Surface/Interface Carrier-Transport Modulation for Constructing Photon-Alternative Ultraviolet Detectors Based on Self-Bending-Assembled ZnO Nanowires

Guo, Zhen; Zhou, Lianqun; Tang, Yuguo; Liu, Lin; Zhang, Zhiqi; Hu, Yang; Ma, Hanbin; Nathan, Arokia; Zhao, Dongxu

doi:10.1021/acsami.7b08066

Cited by 19 publications

(10 citation statements)

References 52 publications

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“…Zinc oxide nanowires (ZnO NWs) are now well-established candidates for (opto)electronic integration in diverse applications such as chemical 1 and biological sensors, 2,3 photodetectors, 4,5 nanogenerators, 6 and piezotronic devices. 2,7 Along with other compound semiconductor materials such as GaN, GaAs, and InP, single crystal ZnO NWs of high crystalline quality, large aspect ratio, and small diameter can be achieved using high-temperature CVD "bottom-up" growth methods.…”

Section: ■ Introductionmentioning

confidence: 99%

General Integration of Vertical Nanowire Arrays with Silicon for Highly Parallel Electronic Device Applications

Evans¹,

Lord²,

Smith³

et al. 2018

J. Phys. Chem. C

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Near-term commercialization of nanowire-based devices is possible through an integrative approach with existing semiconductor platforms. Research-based single nanowire devices suffer from issues related to size dependence and variability; hence, the use of a large number of nanowires in parallel is a prerequisite for real-world devices to scale output and provide statistical averaging of properties. Parallel integration is most directly achieved through electrical contacting of nanowire arrays in the as-grown vertical configuration. Here, we demonstrate a one-step process that overcomes several technological barriers simultaneously, allowing the seamless electrical integration of ZnO nanowire arrays with industry standard silicon substrates. Our seamless integration process is based on the deposition of a metal contact layer on silicon and subsequent CVD nanowire growth. Combined SEM, XRD, and TEM measurements show compositional and structural changes to each metal contact layer candidate during the high-temperature growth process, directly influencing the ZnO base growth and controlling the properties and dimensions of the resulting nanowire arrays. Findings were correlated to nanoscale multiprobe electrical measurements of individual nanowires in the vertical device configuration to demonstrate the effects of each metal layer on conduction through the nanowires and the metal–semiconductor interface. The refractory metal molybdenum gave highly aligned, dense nanowire growth and formed a low-resistance ohmic contact to the base of these arrays offering a simple and scalable process-ready solution for integrating nanowires with the industry standard silicon platform.

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Section: ■ Introductionmentioning

confidence: 99%

General Integration of Vertical Nanowire Arrays with Silicon for Highly Parallel Electronic Device Applications

Evans¹,

Lord²,

Smith³

et al. 2018

J. Phys. Chem. C

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“…The performance of PD devices can be improved by the following ways: (a) enhancing the interaction between light and matter; (b) decreasing the adverse effects of defects; and (c) adjustment of electronic characteristics [60]. Therefore, various approaches, such as doping [61], surface functionalization [56,[62][63][64][65][66][67][68], surface carrier transport modulation [34], interface carrier-trapping/transport control [46], piezo-phototronic effects [69][70][71][72][73][74], and so on, have been utilized to improve the photoresponse performance of low-dimension nanostructure PDs for use in practical applications. The following section lists several ways to deal with surface/interface issues for improving performance of the photodetectors.…”

Section: Surface/interface Engineering For Improvement Of Photodetectmentioning

confidence: 99%

“…It can be observed that charge carrier generation, diffusion, and recombination modulation are all very important considerations in the construction of high-efficiency PDs [46]. The sensitivity, response speed, spectral selectivity, signal-to-noise ratio, and stability of detection are much more important factors to judge the performance of PDs [34].…”

Section: Introductionmentioning

confidence: 99%

Surface/Interface Engineering for Constructing Advanced Nanostructured Photodetectors with Improved Performance: A Brief Review

et al. 2020

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Semiconductor-based photodetectors (PDs) convert light signals into electrical signals via a photon–matter interaction process, which involves surface/interface carrier generation, separation, and transportation of the photo-induced charge media in the active media, as well as the extraction of these charge carriers to external circuits of the constructed nanostructured photodetector devices. Because of the specific electronic and optoelectronic properties in the low-dimensional devices built with nanomaterial, surface/interface engineering is broadly studied with widespread research on constructing advanced devices with excellent performance. However, there still exist some challenges for the researchers to explore corresponding mechanisms in depth, and the detection sensitivity, response speed, spectral selectivity, signal-to-noise ratio, and stability are much more important factors to judge the performance of PDs. Hence, researchers have proposed several strategies, including modification of light absorption, design of novel PD heterostructures, construction of specific geometries, and adoption of specific electrode configurations to modulate the charge-carrier behaviors and improve the photoelectric performance of related PDs. Here, in this brief review, we would like to introduce and summarize the latest research on enhancing the photoelectric performance of PDs based on the designed structures by considering their surface/interface engineering and how to obtain advanced nanostructured photo-detectors with improved performance, which could be applied to design and fabricate novel low-dimensional PDs with ideal properties in the near future.

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“…Various approaches have been adopted to improve the photoresponse performance of 1D ZnO nanostructure photodetectors for use in practical applications. Generally, surface and interface carrier transport modulation are the main routes used to raise photoresponsivity [130]. For instance, Lao et al [131] manipulated and functionalized the polymer polystyrene sulfate (PSS) on the surface of ZnO nanobelts using a layer-by-layer self-assembly method.…”

Section: Photodetectorsmentioning

confidence: 99%

Functional Oxide Based Thin-Film Materials

2020

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Functional oxide-based thin-film materials are extraordinary multifunctional crystals with a huge range of emerging application domains, including as sensors, displays, light emitters, photovoltaics, nanotechnology, spintronics, piezoelectric motors, biotechnology, capacitors, transparent electronics, and next-generation memories. These materials served as the original inspiration for the Special Issue "Functional Oxide-Based Thin-Film Materials". Functional oxide crystals have numerous favorable properties, including good transparency, high conductivity, wide bandgap, and strong luminescence. Thin-film oxide materials have been successfully grown on various substrates by hydrothermal, sol-gel, chemical bath deposition, sputtering, atomic layer deposition, pulsed laser deposition, chemical vapor deposition (CVD), hot filament CVD, plasma-enhanced CVD methods, among others. A number of breakthroughs over the recent years have driven an exponential increase in the research activity in this field. For this Special Issue "Functional Oxide-Based Thin-Film Materials", specialists working with device applications came together to shed light on the properties and behavior of thin-film oxides. This collections of papers covers many aspects of thin-film science and technology, from thin film to nanostructure and from material properties to optoelectronic applications, thus reflecting the numerous varied interests of the community of scientists active in this field.

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Surface/Interface Carrier-Transport Modulation for Constructing Photon-Alternative Ultraviolet Detectors Based on Self-Bending-Assembled ZnO Nanowires

Cited by 19 publications

References 52 publications

General Integration of Vertical Nanowire Arrays with Silicon for Highly Parallel Electronic Device Applications

General Integration of Vertical Nanowire Arrays with Silicon for Highly Parallel Electronic Device Applications

Surface/Interface Engineering for Constructing Advanced Nanostructured Photodetectors with Improved Performance: A Brief Review

Functional Oxide Based Thin-Film Materials

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