“…Finally,t odemonstrate the merit of L-PHE passivated CsPbI 3 QDs for application in optoelectronic devices,w ef abricated QD solar cells and red LEDs using CsPbI 3 QDs w/wo L-PHE passivation as light absorbing and luminescent layer, Figure 5a,t he solar cell device architecture consists of al ayered structure of FTO/TiO 2 / CsPbI 3 QDs/PTAA/MoO 3 /Ag, [31] in which TiO 2 and PTAA are the electron-transport and hole-transport layer, respectively.A ss hown in Figure 5b,t he pristine CsPbI 3 QD solar cells without any additional treatment show ab est efficiency of 13.59 %, similar to previous reports. [27][28][29][30][31][32][33][34] Forthe in situ L-PHE treated QDs,a fter optimization, an enhanced shortcircuit current density (J sc )of15.23 mA cm À2 ,asimilar opencircuit voltage (V oc )of1.23 Vand afill factor (FF) of 0.78 are achieved, giving an improved PCE of 14.62 %, which is among the highest reported PCE values for CsPbI 3 QDs solar cells (Supporting Information, Table S1). Both devices exhibit similar J-V hysteresis (Supporting Information, Figure S8).…”