Surface-Localized Sealing of Porous Ultralow-<i>k</i> Dielectric Films with Ultrathin (&lt;2 nm) Polymer Coating

Yoon, Seong Jun; Pak, Kwanyong; Nam, Taewook; Yoon, Alex; Im, Sung Gap; Cho, Byung Jin

doi:10.1021/acsnano.7b01998

Cited by 19 publications

(14 citation statements)

References 28 publications

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“…S5). The observation is attributed to decreasing adsorption of sulfur and monomers to the substrate with increasing T s (35)(36)(37). Furthermore, higher T s would lead to increase in S─S bond dissociation, leading to a greater density of sulfur radicals within the deposited film.…”

Section: The Effect Of the Scvd Process Parameters On The Properties mentioning

confidence: 99%

One-step vapor-phase synthesis of transparent high refractive index sulfur-containing polymers

et al. 2020

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High refractive index polymers (HRIPs) have recently emerged as an important class of materials for use in a variety of optoelectronic devices including image sensors, lithography, and light-emitting diodes. However, achieving polymers having refractive index exceeding 1.8 while maintaining full transparency in the visible range still remains formidably challenging. Here, we present a unique one-step vapor-phase process, termed sulfur chemical vapor deposition, to generate highly stable, ultrahigh refractive index (n > 1.9) polymers directly from elemental sulfur. The deposition process involved vapor-phase radical polymerization between elemental sulfur and vinyl monomers to provide polymer films with controlled thickness and sulfur content, along with the refractive index as high as 1.91. Notably, the HRIP thin film showed unprecedented optical transparency throughout the visible range, attributed to the absence of long polysulfide segments within the polymer, which will serve as a key component in a wide range of optical devices.

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Section: The Effect Of the Scvd Process Parameters On The Properties mentioning

confidence: 99%

One-step vapor-phase synthesis of transparent high refractive index sulfur-containing polymers

et al. 2020

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“…In addition, the dielectric constant of pV3D3 was 2.2 as previously reported of our group. [ 27,32 ] Such high C i values stem from the extremely thin dielectric layer with the addition of polar hydroxyl functionality.…”

Section: Resultsmentioning

confidence: 99%

Long‐Term Retention of Low‐Power, Nonvolatile Organic Transistor Memory Based on Ultrathin, Trilayered Dielectric Containing Charge Trapping Functionality

Lee

Pak

Choi

et al. 2020

Adv Funct Materials

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A new strategy for multilayer stacking using charge trapping layer (CTL) is proposed and a new CTL material is synthesized, which contains a trilayer dielectric with the total thickness less than 28 nm, deposited by initiated chemical vapor deposition (iCVD) process. 2.6 nm thick poly(1,3,5-trimethyl-1,3,5-trivinyl cyclotrisiloxane) (pV3D3) and 19 nm thick poly(1,4-butanediol diacrylate) (pBDDA) are employed as tunneling and blocking dielectric layers, respectively. A 6 nm thick ultrathin charge trapping layer containing hydroxyl group is inserted between the tunneling and the blocking layers for stable, long-term memory operation. For this purpose, a homogeneous copolymer of 1,4-butanediol diacrylate and 2-hydroxyethyl acrylate is newly synthesized. The fabricated memory with the trilayer dielectric shows larger than 5.8 V of memory window at low programming/erasing voltage of 16 V. The retention characteristics of the low-power organic memory device is improved significantly with the drain current decrease less than 0.40 order after 10 8 s, corresponding to one of the longest retention time periods obtained from organic NVM reported to date. The low-power organic NVM could also be integrated on flexible substrate, which is fully operational even under 2.72% of applied strain.

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“…[ 28–31 ] It is generally accepted that high step coverage can be achieved with iCVD at low P m / P sat (typically < 0.1), P sat being the saturation pressure estimated using the Clapeyron equation at the substrate temperature and P m the partial pressure of monomer determined by multiplying the mole fraction of monomer in the gas feed by the chamber pressure. [ 28–31 ] At higher P m / P sat , the deposited polymer is preferably formed at the top surface of 3D structures and this phenomenon worsens when the aspect ratio increases. [ 30 ] Moreover, for small apertures (such as in the case of porous SiOCH), the deposited polymer is susceptible to easily form bottleneck‐shaped pores.…”

Section: Figurementioning

confidence: 99%

Filling of Nanometric Pores with Polymer by Initiated Chemical Vapor Deposition

Van‐Straaten

Mabrouk

Veillerot

et al. 2020

Macromol. Rapid Commun.

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The integration of porous thin films using microelectronic compatible processes sometimes requires the protection of the interior of the pores during the critical integration steps. In this paper, the polymerization of neo‐pentyl methacrylate (npMA) is performed via initiated chemical vapor deposition (iCVD) on a porous organosilicate (SiOCH) and on a dense SiOCH. The characterizations by Fourier‐transform infrared spectroscopy, spectroscopic ellipsometry, and time‐of‐flight secondary ion mass spectrometry of the different stacks show that iCVD is a powerful technique to polymerize npMA in the nanometric pores and thus totally fill them with a polymer. The study of the pore filling for very short iCVD durations shows that the polymerization in the pores is complete in less than ten seconds and is uniform in depth. Then, the poly(npMA) film growth continues on top of the filled SiOCH layer. These characteristics make iCVD a straightforward and very promising alternative to other infiltration techniques in order to fill the porosity of microporous thin films.

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Surface-Localized Sealing of Porous Ultralow-k Dielectric Films with Ultrathin (<2 nm) Polymer Coating

Cited by 19 publications

References 28 publications

One-step vapor-phase synthesis of transparent high refractive index sulfur-containing polymers

One-step vapor-phase synthesis of transparent high refractive index sulfur-containing polymers

Long‐Term Retention of Low‐Power, Nonvolatile Organic Transistor Memory Based on Ultrathin, Trilayered Dielectric Containing Charge Trapping Functionality

Filling of Nanometric Pores with Polymer by Initiated Chemical Vapor Deposition

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