Surface magnetism: A Monte Carlo study of surface critical behavior

D, Castellanos; Ha, Farach; Rj, Creswick; Cp, Poole

doi:10.1103/physrevb.47.5037

Cited by 4 publications

(3 citation statements)

References 10 publications

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“…Curiously, much less attention has focused upon the direct coupling between these phenomena. Although there is a significant literature concerning the coupling between surface and bulk magnetization, [1][2][3] the remaining papers are scattered thinly among a variety of applications, including nematic liquid crystal ordering at solid interfaces, 4 bulk quenching of surface exciton emission, 5 bulk-influenced surface state behavior at steps on metals, 6 and bulk doping effects on surface band bending in semiconductors. 7 This last paper treats the effects of the semiconductor bulk on surface electronic properties.…”

Section: Introductionmentioning

confidence: 99%

Mechanism for coupling between properties of interfaces and bulk semiconductors

et al. 2003

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A mechanism is described by which interface electronic properties can affect bulk semiconductor behavior. In particular, experimental measurements by photoreflectance of Si(100)-SiO 2 interfaces show how a controllable degree of band bending can be introduced near the interface by ion bombardment and annealing. The resulting electric field near the interface can affect dopant concentration profiles deep within the semiconductor bulk by drastically changing the effective interfacial boundary condition for annihilation of charged interstitial atoms formed during bombardment. Kinetic measurements of band-bending evolution during annealing show that the bending persists for substantial periods even above 1000°C. Unusually low activation energies for the evolution point to a distribution of energies for healing of bombardment-generated interface defects. The findings have significant implications for p-n junction formation during complementary metal oxide semiconductor device processing.

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Section: Introductionmentioning

confidence: 99%

Mechanism for coupling between properties of interfaces and bulk semiconductors

et al. 2003

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“…Recently, the critical behaviours of magnetic films are of great interest. [1,2] In this regard, many approaches such as the effective field theory [3] and Monte Carlo (MC) simulation [4] have been developed. However, most of the studies relating to magnetic films have been devoted to the nearest-neighbour (NN) exchange interaction and few studies have dealt with the next-nearest neighbour (NNN).…”

Section: Introductionmentioning

confidence: 99%

Mean-field and high temperature series expansion calculations of some magnetic properties of Ising and XY antiferromagnetic thin-films

Masrour

Hamedoun

Benyoussef³

2012

Chinese Phys. B

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In this work, the magnetic properties of Ising and XY antiferromagnetic thin-films are investigated each as a function of Néel temperature and thickness for layers (n = 2, 3, 4, 5, 6, and bulk (∞)) by means of a mean-field and high temperature series expansion (HTSE) combined with Padé approximant calculations. The scaling law of magnetic susceptibility and magnetization is used to determine the critical exponent γ, νeff (mean), ratio of the critical exponents γ/ν, and magnetic properties of Ising and XY antiferromagnetic thin-films for different thickness layers n = 2, 3, 4, 5, 6, and bulk (∞).

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“…Recently, the critical behaviors of magnetic films are of great interest [1,2]. In this regard, many approaches such as the effective field theory [3], and Monte Carlo simulation [4] have been developed.…”

Section: Introductionmentioning

confidence: 99%