Mechanism for coupling between properties of interfaces and bulk semiconductors

Dev, Kapil; Jung, M.Y.L.; Braatz, Richard D.; Seebauer, Edmund G.

doi:10.1103/physrevb.68.195311

Cited by 48 publications

(42 citation statements)

References 43 publications

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“…In Ref. 31 it is described how interface states created by ion implantation can result, even in highly doped samples, in a Fermi level that is effectively pinned near mid gap position close to the interface between Si and its surface oxide. Such behaviour might in particular explain the fact that following 30 keV implantation quite similar lattice site distributions are observed for different doping types of Si.…”

Section: Discussionmentioning

confidence: 99%

Direct observation of the lattice sites of implanted manganese in silicon

et al. 2016

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Mn-doped Si has attracted significant interest in the context of dilute magnetic semiconductors. We investigated the lattice location of implanted Mn in silicon of different doping types (n, n + and p + ) in the highly dilute regime. Three different lattice sites were identified by means of emission channeling experiments: ideal substitutional sites; sites displaced from bond-centered towards substitutional sites and sites displaced from anti-bonding towards tetrahedral interstitial sites. For all doping types investigated, the substitutional fraction remained below ∼ 30%. We discuss the origin of the observed lattice sites as well as the implications of such structures on the understanding of Mn-doped Si systems.

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Section: Discussionmentioning

confidence: 99%

Direct observation of the lattice sites of implanted manganese in silicon

et al. 2016

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“…Since this part needs higher temperature, it dominates the whole process. Moreover, the flux of a certain type of elements J can be expressed as [12] ( / ) ( ),…”

Section: Discussionmentioning

confidence: 99%

Built-in electric field influence on impurity-free vacancy disordering of InGaAs/InP quantum well structure

Mei

Teng

et al. 2010

Chin. Sci. Bull.

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Built-in electric field may enhance or retard the impurity-free vacancy disordering (IFVD) during rapid thermal annealing (RTP) by imposing a drift on charged point defects. Built-in electric field is at the interface between dielectric layer and top layer of the structure. Subsequent rapid thermal annealing leads to different intermixing results due to different field directions on InP cap layers in different doping types. Experimental results also show different influences of the built-in field on the two sublattices largely due to different charge numbers of point defects. impurity-free vacancy disordering, point defects, built-in electric field Citation:An Y P, Mei T, Teng J H, et al. Built-in electric field influence on impurity-free vacancy disordering of InGaAs/InP quantum well structure.In recent years, quantum-well-intermixing (QWI) technology including impurity free vacancy disordering [1,2], impurity-induced disordering [3,4], plasma-assisted induced disordering [5,6], laser-induced intermixing [7,8], and ion implantation induced disordering [9,10], has attracted more and more attention due to its potential application to the photonic integrated circuit. Using point defect to enhance lattice diffusion is becoming a very interesting investigation, whereas the influence of defect migration has seldom been addressed. Besides the density of point defects, the influence of built-in electric field on defect migration is also an important factor that determines the result of intermixing. Although using inductively coupled argon plasma (Ar-ICP) enhances the quantum well intermixing, Xu et al. [6] investigated the intermixing characteristic of InGaAs/InP QW under the three differently doped types (p-type, undoped, n-type) in the InP top layer with the theory of built-in electric field. They obtained that the samples with P-type InP top layer enhance the intermixing, whereas the samples with the n-type InP top layer retard the intermixing. However using the method of IFVD in this article, we have achieved the opposite result considering the effect of built-in electric field.

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“…Importantly, the present simulations incorporated nearsurface band bending 8 for spike and flash annealing but not for soak annealing because the soak annealing time was much longer than the time required to anneal out the implantation-induced electrically active defects at the native oxide interface. 16 Detailed reasoning can be found in Ref. 5.…”

Section: Model Formulationmentioning

confidence: 98%

“…For spike and flash annealing, band bending was incorporated by setting the surface Fermi level at 0.4 eV above the valance band edge, in accord with the experimental value. 16 That is, the potential ⌿ at the surface was represented by the boundary condition…”

Section: Model Formulationmentioning

confidence: 99%

Mechanistic benefits of millisecond annealing for diffusion and activation of boron in silicon

Kwok

Braatz

Paul

et al. 2009

Journal of Applied Physics

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Millisecond annealing techniques with flash lamps or lasers have become increasingly common for activating dopants and eliminating implantation-induced damage after ion implantation for transistor junction formation in silicon. Empirical data show that such techniques confer significant benefits, but key physical mechanisms underlying these benefits are not well understood. The present work employs numerical simulation and analytical modeling to show that for boron, millisecond annealing reduces unwanted dopant spreading by greatly reducing the time for diffusion, which more than compensates for an increased concentration of Si interstitials that promote dopant spreading. Millisecond annealing also favorably alters the relative balance of boron interstitial sequestration by the crystal lattice vs interstitial clusters, which leads to improved electrical activation at depths just short of the junction.

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Mechanism for coupling between properties of interfaces and bulk semiconductors

Cited by 48 publications

References 43 publications

Direct observation of the lattice sites of implanted manganese in silicon

Direct observation of the lattice sites of implanted manganese in silicon

Built-in electric field influence on impurity-free vacancy disordering of InGaAs/InP quantum well structure

Mechanistic benefits of millisecond annealing for diffusion and activation of boron in silicon

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