Surface Mediated Growth of Dilute Bismides

Millunchick, Joanna Mirecki; Tait, C. Ryan

doi:10.1007/978-981-13-8078-5_9

Cited by 2 publications

(2 citation statements)

References 37 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Increased hole density upon thermal annealing can result from the release of the captured holes by impurities having low activation energies. It is also obvious that the electron mobility in the as-grown Bi-containing sample (TNBi04) is higher than that of electron mobility in Bi-free n-type sample (TNR00), which can be related to the surfactant effect of Bi [47,48]. Even as the n-and p-type samples are doped at the same nominal density of the dopant atoms, the electron density is about two orders of magnitude of holes, which can also be a suggestion of high-density acceptor-like defects in p-type Bi-containing samples due to low temperature growth conditions.…”

Section: Resultsmentioning

confidence: 99%

A quantitative analysis of electronic transport in n- and p-type modulation-doped GaAsBi/AlGaAs quantum well structures

Donmez

Erol

Çetinkaya

et al. 2021

Semicond. Sci. Technol.

View full text Add to dashboard Cite

Electronic transport properties of as-grown and thermally annealed n-and p-type modulation-doped GaAsBi/AlGaAs quantum well (QW) structures were investigated. Hall mobility of as-grown, n-and p-type modulation doped QW structures are found from raw experimental data as ∼1414 and 95 cm 2 Vs −1 at room temperature. A comparison between reported two-dimensional (2D) electron density determined from the analyses of Shubnikov de Haas oscillations and the 2D Hall electron density indicates a presence of parallel conduction in barrier layer (AlGaAs) and QW layer (GaAsBi) in n-type samples, therefore a parallel channel conduction theory is used to separate the electron mobility in the QW and the barrier layers in n-type modulation doped GaAsBi/AlGaAs QW structure. The extracted electron mobility of the as-grown n-type GaAsBi/AlGaAs QW sample is determined as ∼5975 cm 2 Vs −1 at 4.2 K, which is closer to the electron mobility in GaAs. It is found that thermal annealing at lower temperature than growth temperature increases electron mobility of 2D electron gas, while annealing at higher temperature than growth temperature decreases electron mobility. The temperature dependence of the extracted electron mobility using parallel conduction approximation is analytically calculated by considering possible scattering mechanisms. Analysis of temperature-dependent electron mobility shows that the dominant scattering mechanisms are interface roughness (IFR), acoustic, and alloy-potential scatterings at low and intermediate temperature range, and IFR and optical phonon scattering at the high-temperature range in n-type modulation doped GaAsBi/AlGaAs QW structures.

show abstract

Section: Resultsmentioning

confidence: 99%

A quantitative analysis of electronic transport in n- and p-type modulation-doped GaAsBi/AlGaAs quantum well structures

Donmez

Erol

Çetinkaya

et al. 2021

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…Various works on bismuthcontaining alloys have also reported the benefits of the bismuth surfactant. [11][12][13][14][15][16][17][18][19][20] However, there are no studies on the use of Bi surfactant in homoepitaxial GaSb thin films. 21,22,51 There are currently two major theories on the microscopic mechanism of this surfactant's suppression 3D-islanding effect.…”

Section: Introductionmentioning

confidence: 99%

Bismuth surfactant enhancement of surface morphology and film quality of MBE-grown GaSb(100) thin films over a wide range of growth temperatures

Menasuta,

Grossklaus,

McElearney

et al. 2024

Journal of Vacuum Science &Amp; Technology A

View full text Add to dashboard Cite

We investigate the surface morphologies of two series of homoepitaxial GaSb(100) thin films grown on GaSb(100) substrates by molecular beam epitaxy in a Veeco GENxplor system. The first series was grown at temperatures ranging from 290 to 490°C and serves as a control. The second series was grown using the same growth parameters with bismuth used as a surfactant during growth. We compared the two series to examine the impacts of bismuth over the range of growth temperatures on the GaSb surface morphologies using atomic force microscopy and the film properties using Raman spectroscopy and scanning electron microscopy. High-resolution x-ray diffraction was performed to confirm that bismuth was not incorporated into the films. We found that the morphological evolution of the GaSb series grown without bismuth is consistent with the standard surface nucleation theory and identified the 2D-3D transition temperature as close to 290° C. In contrast, the presence of a Bi surfactant during growth was found to significantly alter the surface morphology and prevent undesired 3D islands at low temperatures. We also observed a preference for hillocks over step morphology at high growth temperatures, antistep bunching effects at intermediate temperatures, and the evolution from step-meandering to mound morphologies at low temperatures. This morphological divergence from the first series indicates that bismuth significantly increases in the 2D Erlich–Schwöebel potential barrier of the atomic terraces, inducing an uphill adatom flux that can smoothen the surface. Our findings demonstrate that bismuth surfactant can improve the surface morphology and film structure of low-temperature grown GaSb. Bismuth surfactant may also improve other homoepitaxial III-V systems grown in nonideal conditions.

show abstract

Surface Mediated Growth of Dilute Bismides

Cited by 2 publications

References 37 publications

A quantitative analysis of electronic transport in n- and p-type modulation-doped GaAsBi/AlGaAs quantum well structures

A quantitative analysis of electronic transport in n- and p-type modulation-doped GaAsBi/AlGaAs quantum well structures

Bismuth surfactant enhancement of surface morphology and film quality of MBE-grown GaSb(100) thin films over a wide range of growth temperatures

Contact Info

Product

Resources

About