Surface modification of InAs(110) surface by low energy ion sputtering

Martinelli, Vincenzo; Šiller, Lidija; Betti, Maria Grazia; Mariani, Carlo; Pennino, U. del

doi:10.1016/s0039-6028(97)00456-1

Cited by 18 publications

(4 citation statements)

References 29 publications

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“…5(g) appears at a lower binding energy than the bulk (B) and surface (S) components. This feature can be attributed to the non-bonding states of Ga atoms, similar to that observed in the core-level spectrum of In 4d for S&A InAs(110) surface [32]. These results suggest that Sb atoms are preferentially removed from the surface by Ar-ion sputtering, and remnant Ga atoms form a cluster on the surface.…”

Section: Resultssupporting

confidence: 73%

Giant Rashba system on a semiconductor substrate with tunable Fermi level: Bi/GaSb(110)–(2×1)

Nakamura

Ohtsubo

Tokumasu

et al. 2019

Phys. Rev. Materials

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We fabricated spin-polarized surface electronic states with tunable Fermi level from semiconductor to low-dimensional metal in the Bi/GaSb(110)-(2×1) surface using angle-resolved photoelectron spectroscopy (ARPES) and spin-resolved ARPES. The spin-polarized surface band of Bi/GaSb(110) exhibits quasi-one-dimensional character with the Rashba parameter α R of 4.1 and 2.6 eVÅ at theΓ andȲ points of the surface Brillouin zone, respectively. The Fermi level of the surface electronic state is tuned in situ by element-selective Ar-ion sputtering on the GaSb substrate. The giant Rashba-type spin splitting with switchable metallic/semiconducting character on semiconductor substrate makes this system a promising candidate for future researches in low-dimensional spintronic phenomena.

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Section: Resultssupporting

confidence: 73%

Giant Rashba system on a semiconductor substrate with tunable Fermi level: Bi/GaSb(110)–(2×1)

Nakamura

Ohtsubo

Tokumasu

et al. 2019

Phys. Rev. Materials

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“…The electronic properties near the surface are significantly altered by the structural damage [1][2][3][4][5][6][7]. The electronic properties near the surface are significantly altered by the structural damage [1][2][3][4][5][6][7].…”

Section: Yukihide Tsuji and Tohru Okamotomentioning

confidence: 99%

Magnetotransport measurements on the defect-induced conduction electrons near InAs(111) surface

Tsuji¹,

Okamoto²

2005

AIP Conference Proceedings

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“…5 The obtained effective surface channel thickness increases with an ion bombardment dose up to ϳ1 m. The effects of cycles of IBA have been investigated for the surface electronic states of n-type InAs using high-resolution electron energy loss spectroscopy (HREELS), [6][7][8] Auger electron spectroscopy and UV photoelectron spectroscopy. 9 The investigations showed that IBA increases the electron density of the accumulation layer.…”

Section: Introductionmentioning

confidence: 99%

Magnetotransport measurements on a damaged surface ofp-type InAs and the annealing effect

Tsuji

Okamoto

2004

Phys. Rev. B

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Low-temperature magnetotransport measurements have been performed to study the spatial distribution of conduction electrons near a (111)B surface of p-type InAs damaged during a SiO 2 -sputtering process. The results obtained for both the in-plane and perpendicular magnetic field orientations are well explained by a two-layer model. The electron density of a three-dimensional electron layer, having submicron thickness, decreases rapidly with an increase in annealing temperature and the conduction is eliminated after annealing above 125°C. On the other hand, the conduction of a two-dimensional electron layer at the surface remains after annealing.

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Surface modification of InAs(110) surface by low energy ion sputtering

Cited by 18 publications

References 29 publications

Giant Rashba system on a semiconductor substrate with tunable Fermi level: Bi/GaSb(110)–(2×1)

Giant Rashba system on a semiconductor substrate with tunable Fermi level: Bi/GaSb(110)–(2×1)

Magnetotransport measurements on the defect-induced conduction electrons near InAs(111) surface

Magnetotransport measurements on a damaged surface ofp-type InAs and the annealing effect

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