Surface modification of Si substrates by CdF2 molecular beam for stable growth of fluoride ultra-thin heterostructures

Growth characteristics of ultra-thin epitaxial Ca Mg1−F2 alloys on Si(1 1 1) substrates

“…However, the Ca x Cd 1Àx F 2 alloy is not suitable for the first layer, which is directly grown on the Si surface as a barrier for the RTDs. This is due to a direct chemical reaction between the CdF 2 molecular beam and the Si substrate leading to the dissociation of fluorides [7,9], and can be expressed as…”