Growth characteristics of ultra-thin epitaxial Ca Mg1−F2 alloys on Si(1 1 1) substrates

Growth of Fluoride Quantum Well Heterostrucutres for Resonant Tunneling Devices on Si Substrates

“…The lattice mismatch for CaF 2 increases more than +1%, which is larger than the value at R.T. referred in Table I, under the high temperature growth conditions due to difference in thermal expansion. We noticed MgF 2 having smaller lattice constant as shown in Table I in order to achieve lattice matching, and were able to grow ultra-thin Ca x Mg 1-x F 2 alloy layers (12). Figure 9 shows surface roughness depending on alloy composition grown at 350 o C. The roughness decreased drastically when x=0.9 (10% MgF 2 contained), and pin-hole free Ca x Mg 1-x F 2 films was obtained.…”

Metalorganic chemical vapor deposition of β-FeSi2 on β-FeSi2 seed crystals formed on Si substrates

“…One way to decrease the number of defects included in the device area is the reduction of device area. In this paper, we adopted a selected-area MBE growth technique for RTD fabrication on Si(111) substrates [17], because this technique was reported to decrease the leakage current and improve the reproducibility of CaF 2 /CdF 2 /CaF 2 RTDs [17,18].…”

Dependence of Resonant Voltage on Quantum-Well Width in CaF2/Fe3Si/CaF2 Resonant Tunneling Diodes

“…10,11) However, the I-V characteristics had very poor reproducibility, probably owing to the defects and pinholes in the CaF 2 barrier layers on the Si(111) substrates. [12][13][14] Thus, we employed a selective-area molecular beam epitaxy (MBE) growth method, presented in ref. 15, to reduce the leak current.…”