Surface modifications of CdS/CdSe co-sensitized TiO2 photoelectrodes for solid-state quantum-dot-sensitized solar cells

Chi, Ching-Fa; Chen, Peter; Lee, Yuh‐Lang; Liu, I-Ping; Chou, Shih-Chuan; Zhang, Xiao Li; Bach, Udo

doi:10.1039/c1jm12860d

Cited by 63 publications

(45 citation statements)

References 35 publications

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“…An energy conversion efficiency of 4.22% was achieved using a TiO 2 /CdS/CdSe/ZnS electrode, under the illumination at one sun (AM 1.5, 100 mW cm −2 ) 69. Similar CdS/CdSe co‐sensitized solar cells have also been reported on CdS/CdSe‐sensitized TiO 2 nanotube/nanowire arrays,78, 79 mesoporous TiO 2 films,80 SnO 2 particle films,81 and CdS/CdSe sensitized ZrO 2 porous films 82a. Fuke and co‐workers demonstrated that ≈100% internal quantum efficiency of photon‐to‐electron conversion can be achieved in butylamine‐capped CdSe QD‐sensitized TiO 2 solar cells by devices utilizing an aqueous Li 2 S electrolyte 82b…”

Section: Novel Properties and Applications Of Cdsementioning

confidence: 58%

Growth and Device Application of CdSe Nanostructures

Zhao

Fang

2012

Adv Funct Materials

130

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Inorganic semiconductor nanostructures have attracted increasing interest in recent years because of their distinguishable role in fundamental studies and technical applications, mainly due to their size-and shape-dependent properties and fl exible processing methods. The use of such nanostructures in optic, optoelectric, and piezoelectric prospects is expected to play a crucial role in future nanoscale devices. Cadmium selenide (CdSe), a well-known direct bandgap II-VI semiconductor in which the bandgap favors absorption over a wide range of the visible spectrum, has been a promising material for applications in such fi elds as photodetectors, fi eld-effect transistors (FETs), fi eld emitters, solar cells, light-emitting diodes (LEDs), memory devices, biosensors, and biomedical imaging. The research on CdSe nanostructures has made remarkable progress in the last few years. The research activities on CdSe nanostructures including various methods for the synthesis of CdSe nanostructures and the unique properties and device applications of these nanostructures are reviewed. Potential future directions of this research area are also highlighted.

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Section: Novel Properties and Applications Of Cdsementioning

confidence: 58%

Growth and Device Application of CdSe Nanostructures

Zhao

Fang

2012

Adv Funct Materials

130

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“…Thus, at higher SILAR cycles, QDs growing on the outer region of the TiO 2 film can actually block the pore channels to the inner regions, hindering any further QD nucleation on the interior. 67,68 This phenomenon is referred to here as pore-blocking. Strategies to improve the ion transport to and reaction with the anode surface include potential-induced solution deposition techniques, 69 improving the wetting of precursor solutions on the anode surface, 36 and sulfidizing the anode (for better growth of metal sulfide QDs).…”

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confidence: 98%

Increased Quantum Dot Loading by pH Control Reduces Interfacial Recombination in Quantum-Dot-Sensitized Solar Cells

2015

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The power conversion efficiency of quantum-dot-sensitized solar cells (QDSSCs) hinges on interfacial charge transfer. Increasing quantum dot (QD) loading on the TiO2 anode has been proposed as a means to block recombination of electrons in the TiO2 to the hole transport material; however, it is not known whether a corresponding increase in QD-mediated recombination processes might lead to an overall higher rate of recombination. In this work, a 3-fold increase in PbS QD loading was achieved by the addition of an aqueous base to negatively charge the TiO2 surface during Pb cation deposition. Increased QD loading improved QDSSC device efficiencies through both increased light absorption and an overall reduction in recombination. Unexpectedly, we also found increased QD size had the detrimental effect of increasing recombination. Kinetic modeling of the effect of QD size on interfacial charge transfer processes provided qualitative agreement with the observed variation in recombination lifetimes. These results demonstrate a robust method of improving QD loading, identify the specific mechanisms by which increased QD deposition impacts device performance, and provide a framework for future efforts optimizing the device architecture of QDSSCs.

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“…A typical strategy of the co-sensitization is employed to achieve a wide wavelength of light absorption. Co-sensitizing the TiO 2 photoelectrodes with different QDs with complementary absorption spectra has been reported previously [16,[26][27][28][29][30][31]. It is known that Ag 2 S with a narrow band gap of 0.9 to 1.05 eV and a larger absorption coefficient [32][33][34] can absorb light with longer wavelength (>500 nm).…”

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confidence: 95%