Surface modifications on InAs decrease indium and arsenic leaching under physiological conditions

Jewett, Scott A.; Yoder, Jeffrey A.; Ivanisevic, Albena

doi:10.1016/j.apsusc.2012.08.115

Cited by 14 publications

(21 citation statements)

References 39 publications

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“…Reference includes investigation of passivation schemes for InAs to inhibit leaching [53] a) GAP-43 -protein involved in growth cone, axonal elongation of neuronal development.…”

Section: Inpmentioning

confidence: 98%

“…Devising experimental conditions to imitate both the healthy and abnormal tissue states can provide valuable information about these parameters, and one common effort involves incubation of semiconductor samples in biomimetic solutions for set time intervals. Table 1 provides a selection of studies documenting the stability and degradation of several III–V and II–IV semiconductors in physiologically relevant solutions – including salt solutions, pH buffers selected to accommodate the wider range of pH values expected in a biosystem (pH 5–9), or (for quantum dots, where cellular uptake becomes a greater concern) model lysosomal conditions …”

Section: Cells On Unmodified Semiconductorsmentioning

confidence: 99%

“…[ 76 ] Copyright 2010, Elsevier. reviews www.MaterialsViews.com III-V and II-IV semiconductors in physiologically relevant solutions -including salt solutions, [ 51,52 ] pH buffers selected to accommodate the wider range of pH values expected in a biosystem (pH 5-9), [ 27,53,54 ] or (for quantum dots, where cellular uptake becomes a greater concern) model lysosomal conditions. [ 55 ] While this data -involving both planar and nanostructured materials -provides a benchmark of what can be expected for the primary application of the material, the surface area to volume ratio of the nanostructures is significantly higher than that of planar, bulk materials.…”

Section: Chemical Stability and Degradationmentioning

confidence: 99%

“…The InAs system discussed by Jewett, et al implemented specifi c concentrations of InCl 3 and As 2 O 3 to probe the response of zebrafi sh to the contaminants potentially released by an InAs surface. [ 53 ] A signifi cant drop in survival is observed 120 hours post-fertilization at 1 mM As 2 O 3 and at 0.1 mM InCl 3 . In the most abrasive solution -the pH 5 buffer (see Table 1 ) -the fi nal molarity of leached In was ≈0.061 m m , while [As] was ≈0.063 m m .…”

Section: Cytotoxicity and General Biocompatibilitymentioning

confidence: 99%

“…Aerosol exposure (rats) [ InAs [53] Incubation with zebrafi sh embryos 120 hours post-fertilization • 100% survival, 100% hatch rate (incubation with cleaned InAs substrate)…”

Section: Inpmentioning

confidence: 99%

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Engineering the Cell-Semiconductor Interface: A Materials Modification Approach using II-VI and III-V Semiconductor Materials

Bain

Ivanisevic

2014

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Developing functional biomedical devices based on semiconductor materials requires an understanding of interactions taking place at the material-biosystem interface. Cell behavior is dependent on the local physicochemical environment. While standard routes of material preparation involve chemical functionalization of the active surface, this review emphasizes both biocompatibility of unmodified surfaces as well as use of topographic features in manipulating cell-material interactions. Initially, the review discusses experiments involving unmodified II-VI and III-V semiconductors - a starting point for assessing cytotoxicity and biocompatibility - followed by specific surface modification, including the generation of submicron roughness or the potential effect of quantum dot structures. Finally, the discussion turns to more recent work in coupling topography and specific chemistry, enhancing the tunability of the cell-semiconductor interface. With this broadened materials approach, researchers' ability to tune the interactions between semiconductors and biological environments continues to improve, reaching new heights in device function.

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“…Reference includes investigation of passivation schemes for InAs to inhibit leaching [53] a) GAP-43 -protein involved in growth cone, axonal elongation of neuronal development.…”

Section: Inpmentioning

confidence: 98%

Section: Cells On Unmodified Semiconductorsmentioning

confidence: 99%

Section: Chemical Stability and Degradationmentioning

confidence: 99%

Section: Cytotoxicity and General Biocompatibilitymentioning

confidence: 99%

“…Aerosol exposure (rats) [ InAs [53] Incubation with zebrafi sh embryos 120 hours post-fertilization • 100% survival, 100% hatch rate (incubation with cleaned InAs substrate)…”

Section: Inpmentioning

confidence: 99%

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Engineering the Cell-Semiconductor Interface: A Materials Modification Approach using II-VI and III-V Semiconductor Materials

Bain

Ivanisevic

2014

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Characterization of a Flexible InGaSb/PI Thin Film Grown by RF Magnetron Sputtering and Aqueous Stability Improvement via Surface Coating

Nishimoto

Fujihara

2018

Physica Status Solidi (a)

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Flexible InGaSb thin films are considered useful for reducing the power generation cost of thermophotovoltaic (TPV) systems. The growth and evaluation of flexible InGaSb thin films on polyimide (PI) films by multicathode RF magnetron sputtering are reported here. The obtained InGaSb/PI thin film is a polycrystalline and nearly stoichiometric (In 0.24 Ga 0.27 Sb 0.49 ) thin film. The conduction type is n-type, and the electron mobility is 108 cm 2 V À1 s À1 . The analysis of its electrical properties shows that In acts as a surfactant during the crystal growth. Two types of donors (In i or Sb In and defects related to the dangling bonds in the grain boundary) are observed in the InGaSb/PI thin film, with no residual acceptor. Furthermore, it is important to reduce the environmental release of TPV films by improving their aqueous stability and thereby expand the application range of largearea TPV systems. The effectiveness of a surface coating material, namely (3-mercaptopropyl) trimethoxysilane (MPT), is clarified by comparing it with the efficacy of other coating materials. The MPT coating covers the entire InGaSb/PI thin film and helps reduce its toxicity without affecting its properties. These findings lead to the conclusion that the flexible MPT-coated InGaSb/PI thin film has potential applications in TPV cells.

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Surface Functionalization of III–V Nanowires

Timm

Mikkelsen²

2020

Fundamental Properties of Semiconductor Nanowires

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Surface modifications on InAs decrease indium and arsenic leaching under physiological conditions

Cited by 14 publications

References 39 publications

Engineering the Cell-Semiconductor Interface: A Materials Modification Approach using II-VI and III-V Semiconductor Materials

Engineering the Cell-Semiconductor Interface: A Materials Modification Approach using II-VI and III-V Semiconductor Materials

Characterization of a Flexible InGaSb/PI Thin Film Grown by RF Magnetron Sputtering and Aqueous Stability Improvement via Surface Coating

Surface Functionalization of III–V Nanowires

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